W24258-LL Datasheet, PDF (7/10 Pages) Winbond – 32K X 8 CMOS STATIC RAM

W24258/LL
DATA RETENTION CHARACTERISTICS
(TA = 0° C to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
VDD for Data Retention
VDR _{CS ≥ VDD -0.2V}
Data Retention Current
IDDDR _{CS ≥ VDD -0.2V, VDD = 3V}
Chip Deselect to Data
Retention Time
TCDR See data retention waveform
Operation Recovery Time TR
* Read Cycle Time
MIN. TYP. MAX. UNIT
2.0 -
-
V
-
-
2 µA
0
-
-
nS
TRC* -
-
nS
DATA RETENTION WAVEFORM
VDD
0.9 VDD
VDR _=> 2V
0.9VDD
TCDR
TR
CS
VIH
CS _=> VDD - 0.2V
VIH
ORDERING INFORMATION
PART NO.
W24258-55LL
W24258-70LL
W24258S-55LL
W24258S-70LL
W24258Q-55LL
W24258Q-70LL
ACCESS
TIME
(nS)
55
70
55
70
55
70
OPERATING
CURRENT MAX.
(mA)
70
60
70
60
70
60
STANDBY
CURRENT MAX.
(µA)
5
5
5
5
5
5
PACKAGE
600 mil DIP
600 mil DIP
330 mil SOP
330 mil SOP
Standard type one TSOP
Standard type one TSOP
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.
Publication Release Date: November 1998
-7-
Revision A5