W24258-LL Datasheet, PDF (2/10 Pages) Winbond – 32K X 8 CMOS STATIC RAM

W24258/LL
TRUTH TABLE
CS
OE
WE
H
X
X
L
H
H
L
L
H
L
X
L
MODE
Not Selected
Output Disable
Read
Write
I/O1−I/O8
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
IDD
IDD
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Supply Voltage to VSS Potential
Input/Output to VSS Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
RATING
-0.5 to +7.0
-0.5 to VDD +0.5
1.0
-65 to +150
0 to 70
UNIT
V
V
W
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 5V ±10%; VSS = 0V; TA = 0° C to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
Input Low Voltage
VIL
-
-0.5
Input High Voltage
VIH
-
+2.2
Input Leakage Current
ILI VIN = VSS to VDD
-1
Output Leakage Current ILO _{VI/O = VSS to VDD, CS = VIH}
-1
(min.) or OE = VIH (min.) or
WE = VIL (max.)
Output Low Voltage
VOL IOL = +2.1 mA
-
Output High Voltage
VOH IOH = -1.0 mA
2.4
Operating Power
Supply Current
IDD _{CS = VIL (max.), I/O = 0} 55
-
I/O = 0 mA, Cycle =
min.
70 -
Duty =100%
Standby Power Supply
ISB _{CS = VIH (min.), Cycle = min.}
-
Current
Duty = 100%
ISB1 _{CS ≥ VDD -0.2V}
-
Note : Typical parameter is measured under ambient temperature TA = 25° C and VDD = 5V.
TYP.*
-
-
-
-
-
-
-
-
-
0.7
MAX.
+0.8
VDD +0.5
+1
+1
0.4
-
70
60
3
5
UNIT
V
V
µA
µA
V
V
mA
mA
mA
µA
-2-