W25P240A Datasheet, PDF (6/14 Pages) Winbond – 64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM

W25P240A
Write Table, continued
READ/WRITE FUNCTION
Write byte 8, byte 7, byte 6,
byte 5, byte 4, byte 3
Write byte 8, byte 7, byte 6,
byte 5, byte 4, byte 3, byte 1
Write byte 8, byte 7, byte 6,
byte 5, byte 4, byte 3, byte 2
Write all bytes
Write all bytes
GW BWE BW8 BW7 BW6 BW5 BW4 BW3 BW2 BW1
1
0
0
0
0
0
0
0
1
1
1
0
0
0
0
0
0
0
1
0
1
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0
0
x
x
x
x
x
x
x
x
x
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Supply Voltage to Vss
Input/Output to VSS Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
RATING
-0.5 to 4.6
VSS -0.5 to VDD +0.5
1.5
-65 to 150
0 to +55
UNIT
V
V
W
°C
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VDD = 3.15V to 3.6V, VSS = 0V, TA = 0 to 55° C)
PARAMETER
SYM.
TEST CONDITIONS
Input Low Voltage
VIL
-
Input High Voltage
VIH
-
Input Leakage Current ILI VIN = VSS to VDD
Output Leakage
Current
ILO VI/O = VSS to VDD, and data I/O
pins in high-Z state defined in
truth table
Output Low Voltage
VOL IOL = +8.0 mA
Output High Voltage VOH IOH = -4.0 mA
Operating Current
Standby Current
IDD TCYC ≥ min., I/O = 0 mA
ISB Unselected mode defined in
truth table, VIN, VIO = VIH
(min.) /VIL (max.) TCYC ≥ min.
Note: Typical characteristics are measured at VDD = 3.3V, TA = 25° C.
MIN.
-0.5
+2.0
-10
-10
-
2.4
-
-
TYP
.
-
-
-
-
-
-
-
-
MAX. UNIT
+0.8
V
VDD +0.3 V
+10
µA
+ 10
µA
0.4
V
-
V
350
mA
80
mA
-6-