W25Q40BV_12 Datasheet, PDF (59/73 Pages) Winbond – 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q40BV
8.3 Power-up Timing and Write Inhibit Threshold
Parameter
VCC (min) to /CS Low
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
Symbol
tVSL⁽¹⁾
tPUW⁽¹⁾
VWI⁽¹⁾
spec
Unit
MIN
MAX
10
µs
1
10
ms
1.0
2.0
V
Note:
1. These parameters are characterized only.
Figure 38. Power-up Timing and Voltage Levels
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Publication Release Date: May 04, 2012
Revision C