W25Q16BV Datasheet, PDF (55/68 Pages) Winbond – 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q16BV
12.4 DC Electrical Characteristics
PARAMETER
SYMBOL CONDITIONS
Input Capacitance
Output Capacitance
Input Leakage
I/O Leakage
Standby Current
CIN(1)
Cout⁽¹⁾
ILI
ILO
ICC1
Power-down Current
ICC2
Current Read Data /
Dual /Quad 1MHz⁽²⁾
Current Read Data /
Dual /Quad 33MHz⁽²⁾
Current Read Data /
Dual /Quad 50MHz⁽²⁾
Current Read Data /
Dual Output Read/Quad
Output Read 80MHz⁽²⁾
Current Write Status
Register
Current Page Program
Current Sector/Block
Erase
Current Chip Erase
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
ICC3
ICC3
ICC3
ICC3
ICC4
ICC5
ICC6
ICC7
VIL
VIH
VOL
VOH
VIN = 0V⁽¹⁾
VOUT = 0V⁽¹⁾
/CS = VCC,
VIN = GND or VCC
/CS = VCC,
VIN = GND or VCC
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
/CS = VCC
/CS = VCC
/CS = VCC
/CS = VCC
IOL = 1.6 mA
IOH = –100 µA
SPEC
MIN
TYP
25
1
4/5/6
6/7/8
7/8/9
10/11/12
8
20
20
20
VCC x 0.7
VCC – 0.2
Notes:
1. Tested on sample basis and specified through design and characterization data. TA=25° C, VCC 3V.
2. Checker Board Pattern.
MAX
6
8
±2
±2
50
5
6/8.5/10
9/10.5/12
10/12/13.5
15/16.5/18
12
25
25
25
VCC x 0.3
0.4
UNIT
pF
pF
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
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Publication Release Date: July 08, 2010
Revision F