W25Q16BV Datasheet, PDF (54/68 Pages) Winbond – 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q16BV
12.3 Power-up Timing and Write Inhibit Threshold
PARAMETER
VCC (min) to /CS Low
Time Delay Before Write Instruction
SYMBOL
tVSL⁽¹⁾
tPUW⁽¹⁾
SPEC
MIN
10
1
Write Inhibit Threshold Voltage
VWI⁽¹⁾
1
Note:
1. These parameters are characterized only.
MAX
10
2
UNIT
µs
ms
V
Figure 32. Power-up Timing and Voltage Levels
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