W25Q16V Datasheet, PDF (51/60 Pages) Winbond – 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q16V
11.7 AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL ALT
MIN
SPEC
TYP
MAX
UNIT
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
/HOLD to Output High-Z
tHHQX⁽²⁾
tLZ
tHLQZ⁽²⁾
tHZ
7
ns
12
ns
Write Protect Setup Time Before /CS Low
tWHSL⁽³⁾
20
ns
Write Protect Hold Time After /CS High
tSHWL⁽³⁾
100
ns
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
tDP⁽²⁾
tRES1⁽²⁾
3
µs
3
µs
/CS High to Standby Mode with Electronic Signature
Read
tRES2⁽²⁾
1.8
µs
/CS High to next Instruction after Suspend
tSUS⁽²⁾
20
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) ⁽⁴⁾
t _BP1
Additional Byte Program Time (After First Byte) ⁽⁴⁾
t _BP2
30
50
µs
6
12
µs
Page Program Time
tPP
1.5
3
ms
Sector Erase Time (4KB)
tSE
120
200
ms
Block Erase Time (32KB)
Block Erase Time (64KB)
tBE ₁
0.5
1
s
tBE ₂
0.75
1.5
s
Chip Erase Time
tCE
15
30
s
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP0 is set to 1.
4. For multiple bytes after first byte within a page, t_BPN = t_{BP1 +} t_{BP2 * N} (typical) and t_BPN = t_{BP1 +} t_{BP2 * N} (max), where N =
number of bytes programmed.
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Publication Release Date: October 7, 2009
Revision E