W45B012 Datasheet, PDF (5/16 Pages) Winbond – 1M x 1 SERIAL FLASH MEMORY

Preliminary W45B012
DC CHARACTERISTICS
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under "Absolute maximum Stress Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation of the device at
these conditions or conditions greater than those defined in the operational sections of this data sheet
is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
PARAMETER
RATING
UNIT
Temperature Under Bias
-55 to +125
°C
Storage Temperature
-65 to +150
°C
D. C. Voltage on Any Pin to Ground Potential
-0.5 to VDD +0.5
V
Transient Voltage (<20 nS) on Any Pin to Ground Potential
-1.0 to VDD +1.0
V
Package Power Dissipation Capability (TA = 25° C)
1.0
W
Surface Mount Lead Soldering Temperature (3 Seconds)
240
°C
Output Short Circuit Current 1
50
mA
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
DC Operating Characteristics
(VDD =2.7V _− 3.6V, VSS = 0V, TA = 0 to 70_° C)
PARAMETER
SYM.
TEST CONDITION
MIN.
Power Supply Current
f = 20 MHz
IDD #CE = VIL,
VDD = VDD Max.
Program/Erase -
Read
-
Standby Current
ISB #CE = VIHC, VDD = VDD Max.
-
Input Leakage
ILI VIN = GND to VDD, VDD = VDD Max.
-
Output Leakage
ILO VOUT = GND to VDD, VDD = VDD Max. -
Input Low Voltage
VIL
-0.2
Input High Voltage
VIH
2.0
Output Low Voltage
VOL IOL = 1.6 mA
-
Output High Voltage
VOH IOH = -0.4 mA
2.4
Note: Outputs shorted for no more than one second. No more than one output shorted at a time.
LIMITS
MAX. UNITS
30
mA
20
mA
15
µA
2
µA
2
µA
0.6
V
VDD +0.3 V
0.4
V
-
V
Publication Release Date: April 18, 2002
-5-
Revision A1