W19B160BTT7H Datasheet, PDF (4/47 Pages) Winbond – 2.7~3.6-volt write (program and erase) operations, Fast write operation

W19B160BT/B DATA SHEET
1. GENERAL DESCRIPTION
The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M × 8 or 1M × 16 bits.
For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one
32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (× 16) data appears on DQ15-DQ0, and
byte-wide (× 8) data appears on DQ7−DQ0. The device can be programmed and erased in-system
with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of
the W19B160B results in fast program/erase operations with extremely low current consumption. The
device can also be programmed and erased by using standard EPROM programmers.
2. FEATURES
Performance
• 2.7~3.6-volt write (program and erase) operations
• Fast write operation
− Sector erase time: 0.7s (Typical)
− Chip erases time: 25 s (Typical)
− Byte/Word programming time: 5/7 µs (Typical)
• Read access time: 70 ns
• Typical program/erase cycles:
− 100K
• Twenty-year data retention
• Ultra low power consumption
− Active current (Read): 9mA (Typical)
− Active current (Program/erase): 20mA (Typical)
− Standby current: 0.2 μA (Typical)
Architecture
• Sector erases architecture
− One 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors
− Top or bottom boot block configurations available
− Supports full chip erase
• JEDEC standard byte-wide and word-wide pin-outs TTL compatible I/O
• Manufactured on WinStack-S 0.13µm process technology
• Available packages: 48-pin TSOP
Software Features
• Compatible with common Flash Memory Interface (CFI) specification
− Flash device parameters stored directly on the device
− Allows software driver to identify and use a variety of different current and future Flash products
• End of program detection
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