W26L010A Datasheet, PDF (3/10 Pages) Winbond – 64K X 16 High Speed CMOS Static RAM

W26L010A
Operating Characteristics
(VDD = 3.3V ±5%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
Input Low Voltage
VIL
Input High Voltage
VIH
TEST CONDITIONS
-
-
Input Leakage
Current
ILI VIN = VSS to VDD
Output Leakage
Current
ILO VI/O = VSS to VDD
Output Pins in High Z,
See Truth Table
Output Low Voltage VOL IOL = +8.0 mA
Output High Voltage VOH IOH = -4.0 mA
Operating Power
IDD _{CS = VIL (max.), Cycle =}
10
min.
Supply Current
I/O = open, Duty = 100%
12
Standby Power
ISB _{CS = VIH (min.), Cycle = min.}
Supply Current
ISB1 _{CS = VDD -0.2V, I/O = open}
All other pins = VDD -0.2V/GND
Note: Typical characteristics are evaluated at VDD = 3.3V, TA = 25° C.
MIN.
-0.5
+2.0
-10
TYP.
-
-
-
MAX.
+0.8
VDD
+0.3
+10
UNIT
V
V
µA
-10 - +10 µA
-
-
0.4
V
2.4 -
-
V
-
- 160 mA
-
- 140
-
-
30 mA
-
-
10 mA
CAPACITANCE
(VDD = 3.3V, TA = 25° C, f = 1 MHz)
PARAMETER
SYM.
Input Capacitance
CIN
Input/Output Capacitance
CI/O
Note: These parameters are sampled but not 100% tested.
CONDITIONS
VIN = 0V
VOUT = 0V
MAX.
6
8
UNIT
pF
pF
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
CONDITIONS
0V to 3V
2 nS
1.5V
CL = 30 pF, IOH/IOL = -4 mA/8 mA
Publication Release Date: July 1998
-3-
Revision A3