W39L040 Datasheet, PDF (27/27 Pages) Winbond – 512 K X 8 CMOS FLASH MEMORY

W39L040
13. VERSION HISTORY
VERSION
A1
DATE
April 16, 2002
A2
August 13, 2002
A3
February 10, 2003
PAGE
-
11
12
1, 3, 15
DESCRIPTION
Initial Issued
Correct Block Erase as Sector Erase in the
Embedded Erase Algorithm
Correct Embedded #Data Polling Algorithm
Modify the Standby Current (CMOS input) from
15 µA to 2 µA (typ.) and 50 µA to 15 µA (max.)
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Taipei Office
9F, No.480, Rueiguang Rd.,
Neihu District, Taipei, 114,
Taiwan, R.O.C.
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation America
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]
FAX: [phone]
Winbond Electronics (Shanghai) Ltd.
27F, 2299 Yan An W. Rd. Shanghai,
200336 China
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation Japan
7F Daini-ueno BLDG, 3-7-18
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
TEL: [phone]
FAX: [phone]
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
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Publication Release Date: February 10, 2003
Revision A3