W39L040 Datasheet, PDF (1/27 Pages) Winbond – 512 K X 8 CMOS FLASH MEMORY

W39L040
512K × 8 CMOS FLASH MEMORY
1. GENERAL DESCRIPTION
The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible
erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are
composed of 16 smaller even pages with 4 Kbytes. The byte-wide (× 8) data appears on DQ7 − DQ0.
The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt
VPP is not required. The unique cell architecture of the W39L040 results in fast program/erase
operations with extremely low current consumption (compared to other comparable 3.3-volt flash
memory products). The device can also be programmed and erased by using standard EPROM
programmers.
2. FEATURES
• Single 3.3-volt operations
− 3.3-volt Read
− 3.3-volt Erase
− 3.3-volt Program
• Fast Program operation:
− Byte-by-Byte programming: 50 µS (max.)
• Fast Erase operation:
− Chip Erase cycle time: 100 mS (max.)
− Sector Erase cycle time: 25 mS (max.)
− Page Erase cycle time: 25 mS (max.)
• Read access time: 70/90 nS
• 8 Even sectors with 64K bytes each, which is
composed of 16 flexible pages with 4K bytes
• Any individual sector or page can be erased
• Hardware protection:
− Optional 16K byte or 64K byte Top/Bottom
Boot Block with lockout protection
• Flexible 4K-page size can be used as
Parameter Blocks
• Typical program/erase cycles: 1K/10K
• Twenty-year data retention
• Low power consumption
− Active current: 10 mA (typ.)
− Standby current: 2 µA (typ.)
• End of program detection
− Software method: Toggle bit/Data polling
• TTL compatible I/O
• JEDEC standard byte-wide pinouts
• Available packages: 32L PLCC, 32L TSOP (8 x
20 mm) and 32L STSOP (8 x 14 mm)
Publication Release Date: February 10, 2003
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Revision A3