W39L010 Datasheet, PDF (27/27 Pages) Winbond – 128K X 8 CMOS FLASH MEMORY

W39L010
13. VERSION HISTORY
VERSION
A1
A2
A3
A4
DATE
Aug. 2000
May 31, 2002
July 9, 2002
Jan. 9, 2003
PAGE
DESCRIPTION
-
Initial Issued
1, 23, 24 Rename STOP (8 x 14 mm) as STSOP (8 x 14 mm)
1
Add 1K of Typical program/erase cycles
4
Modify Low VDD Write and read Inhibit
10, 11, 12 Delete old flow chart and add Embedded Algorithm
24
Add 1K for ordering information
Add HOW TO READ THE TOP MARKING
11
Remove Block Erase from the Embedded Erase
Algorithm
12
Correct Embedded #Data Polling Algorithm
1, 4, 9, 13, 14 Modify Boot Block from 16K byte to 8K byte
4
Delete Low VDD inhibit write description
2
Modify Block Diagram
13
Modify TBP to 2mS in Boot Block Lockout Enable Flow
Chart
16
Modify Test Loading parameter
17
Add page erase time
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Taipei Office
9F, No.480, Rueiguang Rd.,
Neihu District, Taipei, 114,
Taiwan, R.O.C.
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation America
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]
FAX: [phone]
Winbond Electronics (Shanghai) Ltd.
27F, 2299 Yan An W. Rd. Shanghai,
200336 China
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation Japan
7F Daini-ueno BLDG, 3-7-18
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
TEL: [phone]
FAX: [phone]
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
- 27 -
Publication Release Date: January 9, 2004
Revision A4