W39L010 Datasheet, PDF (17/27 Pages) Winbond – 128K X 8 CMOS FLASH MEMORY

W39L010
8. ELECRICAL CHARACTERISTICS
8.1 Absolute maximum Ratings
PARAMETER
Power Supply Voltage to VSS Potential
Operating Temperature
Storage Temperature
Voltage on Any Pin to Ground Potential except A9
Voltage on A9 Pin to Ground Potential
RATING
-2.0 to +4.6
0 to +70
-65 to +125
-2.0 to +4.6
-2.0 to +13.0
UNIT
V
°C
°C
V
V
Note: Exposure to conditions beyond those listed under Absolute maximum Ratings may adversely affect the life and reliability
of the device.
8.2 DC Operating Characteristics
(VDD = 3.3V ±0.3V, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM.
TEST CONDITIONS
Power Supply
Current
#CE=#OE= VIL, #WE= VIH, all DQs
IDD ^open
Address inputs = VIL/VIH, at f = 5 MHz
Standby VDD
ISB1 #CE= VIH, all DQs open
Current (TTL input)
Other inputs = VIL/VIH
Standby VDD Current
#CE = VDD -0.3V, all DQs open
ISB2
(CMOS input)
Other inputs = VDD -0.3V/ VSS
Input Leakage
Current
ILI VIN = VSS to VDD
Output Leakage
Current
ILO VOUT = VSS to VDD
Input Low Voltage
VIL
-
Input High Voltage VIH
-
Output Low Voltage VOL IOL = 2.1 mA
Output High Voltage VOH IOH = -0.4 mA
LIMITS
UNIT
MIN. TYP. MAX.
- 20
mA
30
-1
- 15
2
mA
µA
50
--
1
µA
--
1
µA
-0.3 -
0.8
V
2.0 - VDD+0.5 V
--
0.45
V
2.4 -
-
V
8.3 Pin Capacitance
(VDD = 3.3V, TA = 25° C, f = 1 MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
CIN
COUT
CONDITIONS
VIN = 0V
VOUT = 0V
TYP.
6
10
MAX.
8
12
UNIT
pF
pF
- 17 -
Publication Release Date: January 9, 2004
Revision A4