W49F102 Datasheet, PDF (21/21 Pages) Winbond – 64K X 16 CMOS FLASH MEMORY

W49F102
VERSION HISTORY
VERSION
A1
A2
DATE
Jun. 1999
Oct. 1999
A3
Oct. 2000
PAGE
-
13
1, 11, 13, 14,
19
13
1, 21
DESCRIPTION
Initial Issued
Change Read Cycle Timing Parameter:
VDD = 5.0V ±10% for 40, 45, 50, 55, 70 nS
Delete 35, 50, 55, 70 nS bins
TRC: 35 nS -> 40 nS; 40 nS -> 42 nS
TAH: 50 nS -> 45 nS
TWP & TWPH: 90 nS -> 45 nS
TCP: 90 nS -> 50 nS
Add in TCPH = 50 nS
TDS: 50 nS -> 45 nS
Delete 1K cycling option
Headquarters
Winbond Electronics (H.K.) Ltd.
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd;
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886 -2-27197006
Taipei Office
11F, No. 115, Sec. 3, Min -Sheng East Rd.,
Taipei, Taiwan
TEL: [phone]
FAX: [phone]
Note: All data and specifications are subject to change withou t notice.
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]
FAX: [phone]
- 21 -
Publication Release Date: October 2000
Revision A3