W49F102 Datasheet, PDF (11/21 Pages) Winbond – 64K X 16 CMOS FLASH MEMORY

W49F102
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Power Supply Voltage to VSS Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential except OE
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
Voltage on OE Pin to Ground Potential
RATING
-0.5 to +7.0
0 to +70
-65 to +150
-0.5 to VDD +1.0
-1.0 to VDD +1.0
-0.5 to 12.5
UNIT
V
°C
°C
V
V
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
DC Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM.
TEST CONDITIONS
Power Supply
Current
ICC _{CE = OE= VIL, WE = VIH,}
all I/Os open
Address inputs = VIL/VIH, at f = 5 MHz
Standby VDD
Current (TTL input)
ISB1 _{CE = VIH, all I/Os open}
Other inputs = VIL/VIH
Standby VDD Current ISB2 _{CE = VDD -0.3V, all I/Os open}
(CMOS input)
Other inputs = VDD -0.3V/Vss
Input Leakage
Current
ILI VIN = Vss to VDD
Output Leakage
Current
ILO VOUT = Vss to VDD
Input Low Voltage
VIL
-
Input High Voltage VIH
-
Output Low Voltage VOL IOL = 2.1 mA
Output High Voltage VOH IOH = -0.4 mA
LIMITS
MIN. TYP. MAX.
- 25 50
-
2
3
- 20 100
-
-
-
-
-0.3 -
2.0 -
-
-
2.4 -
10
10
0.8
VDD
+0.5
0.45
-
UNIT
mA
mA
µA
µA
µA
V
V
V
V
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Publication Release Date: October 2000
Revision A3