W29F102 Datasheet, PDF (21/21 Pages) Winbond – 64K 16 CMOS FLASH MEMORY

W29F102
VERSION HISTORY
VERSION
A1
A2
DATE
Feb. 1998
Apr. 1998
A3
Mar. 1999
A4
Jun. 1999
PAGE
1, 13, 14, 19
6, 7, 8, 9, 10
6, 7, 8, 9
18
1, 13, 14, 19
11, 19
5
11, 13
DESCRIPTION
Initial Issued
Add 35 nS item and delete 50 nS item
Change address format from A15 to A14
Add the pause time
Correct the address from 2000 to 5555
Add 50/70 nS bining
Delete 35 nS bining
Change Icc 50 mA to 70 mA (only for 45 nS)
Change VIL 0.8V to 0.6V (only for 45 nS)
VHH = 12V ±0.5V
VDD = 5.0V ±10%
Headquarters
Winbond Electronics (H.K.) Ltd.
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
Rm. 803, World Trade Square, Tower II,
123 Hoi Bun Rd., Kwun Tong,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-27197006
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: [phone]
FAX: [phone]
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]
FAX: [phone]
Note: All data and specifications are subject to change without notice.
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Publication Release Date: June 1999
Revision A4