W29F102 Datasheet, PDF (11/21 Pages) Winbond – 64K 16 CMOS FLASH MEMORY

W29F102
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Power Supply Voltage to Vss Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential except OE
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
Voltage on OE Pin to Ground Potential
RATING
-0.5 to +7.0
0 to +70
-65 to +150
-0.5 to VDD +1.0
-1.0 to VDD +1.0
-0.5 to 12.5
UNIT
V
°C
°C
V
V
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
DC Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM.
TEST CONDITIONS
Power Supply
Current
Standby VDD
Current (TTL input)
Standby VDD
Current
(CMOS input)
Input Leakage
Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
ICC _{CE=OE= VIL, WE= VIH, all} 50, 55,
I/Os open Address inputs = ^{70 nS}
VIL/VIH, at f = 5 MHz
45 nS
ISB1 _{CE = VIH, all I/Os open}
Other inputs = VIL/VIH
ISB2 _{CE = VDD -0.3V, all I/Os open}
Other inputs = VDD -0.3V/GND
ILI VIN = GND to VDD
ILO VOUT = GND to VDD
VIL
-
50, 55, 70 nS
45 nS
VIH
-
Output Low Voltage VOL IOL = 2.1 mA
Output High Voltage VOH IOH = -0.4 mA
LIMITS
UNIT
MIN. TYP. MAX.
- 25 50 mA
- 25 ⁷⁰ mA
-
2
3 mA
- 20 100 µA
-
-
-
-
-0.3 -
-0.3 -
2.0 -
-
-
2.4 -
10 µA
10 µA
0.8
V
0.6
V
VDD
V
+0.5
0.45 V
-
V
- 11 -
Publication Release Date: June 1999
Revision A4