W39F010 Datasheet, PDF (19/33 Pages) Winbond – 128K × 8 CMOS FLASH MEMORY

W39F010
8. DC CHARACTERISTICS
8.1 Absolute maximum Ratings
PARAMETER
Power Supply Voltage to VSS Potential
Operating Temperature
Storage Temperature
Voltage on Any Pin to Ground Potential Except A9
Voltage on A9 Pin to Ground Potential
RATING
-2.0 to +7.0
0 to +70
-65 to +125
-2.0 to +7.0
-2.0 to +13.0
UNIT
V
°C
°C
V
V
Note: Exposure to conditions beyond those listed under Absolute maximum Ratings may adversely affect the life and reliability
of the device.
8.2 DC Operating Characteristics
(VDD = 5V ±0.5V, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
#CE = #OE = VIL, #WE = VIH,
Power Supply Current IDD all DQs open
- 15
Address inputs = VIL/VIH, at f = 5 MHz
mA
30
Standby VDD
Current (TTL input)
ISB1 #CE = VIH, all DQs open
Other inputs = VIL/VIH
-1
2
mA
Standby VDD Current
(CMOS input)
#CE = VDD -0.3V, all DQs open
ISB2
Other inputs = VDD -0.3V/ VSS
μA
- 15
50
Input Leakage Current ILI VIN = VSS to VDD
--
1
μA
Output Leakage
Current
ILO VOUT = VSS to VDD
--
1
μA
Input Low Voltage
VIL
Input High Voltage
VIH
-
-0.3 -
0.8
V
-
2.0 - VDD +0.5 V
Output Low Voltage
VOL IOL = 2.1 mA
--
0.45 V
Output High Voltage VOH IOH = -0.4 mA
2.4 -
-
V
8.3 Pin Capacitance
(VDD = 5V, TA = 25° C, f = 1 MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
CIN
COUT
CONDITIONS
VIN = 0V
VOUT = 0V
TYP.
6
10
MAX.
8
12
UNIT
pF
pF
Publication Release Date: December 26, 2005
- 19 -
Revision A4