W39V040FB_07 Datasheet, PDF (18/34 Pages) Winbond – 512K × 8 CMOS FLASH MEMORY WITH FWH INTERFACE

W39V040FB
10. ELECTRICAL CHARACTERISTICS
10.1 Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Operating Temperature
0 to +70
°C
Storage Temperature
-65 to +150
°C
Power Supply Voltage to VSS Potential
-0.5 to +4.0
V
D.C. Voltage on Any Pin to Ground Potential
-0.5 to VDD +0.5
V
VPP Voltage
-0.5 to +13
V
Transient Voltage (<20 nS) on Any Pin to Ground Potential
-1.0 to VDD +0.5
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings May adversely affect the life and reliability
of the device.
10.2 Programmer interface Mode DC Operating Characteristics
(VDD = 3.3V ± 0.3V, VSS= 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
MIN. TYP. MAX.
UNIT
Power Supply
Current
In Read or Write mode, all DQs open
mA
ICC
- 15
30
Address inputs = 3.0V/0V, at f = 3 MHz
Input Leakage
Current
ILI VIN = VSS to VDD
--
90
μA
Output Leakage
Current
ILO VOUT = VSS to VDD
--
90
μA
Input Low Voltage
VIL
-
-0.5 -
0.8
V
Input High Voltage VIH
-
2.0 - VDD +0.5 V
Output Low Voltage VOL IOL = 2.1 mA
--
0.45
V
Output High Voltage VOH IOH = -0.1mA
2.4 -
-
V
- 18 -