W29C022 Datasheet, PDF (11/20 Pages) Winbond – 256K x 8 CMOS FLASH MEMORY

W29C022
Power-up Timing
PARAMETER
Power-up to Read Operation
Power-up to Write Operation
CAPACITANCE
(VDD = 5.0V, TA = 25° C, f = 1 MHz)
PARAMETER
DQ Pin Capacitance
Input Pin Capacitance
SYMBOL
CDQ
CIN
SYMBOL
TPU. READ
TPU. WRITE
CONDITIONS
VDQ = 0V
VIN = 0V
TYPICAL
100
5
UNIT
µS
mS
MAX.
12
6
UNIT
pF
pF
AC CHARACTERISTICS
AC Test Conditions
(VDD = 5.0V ±10% for 90 nS and 120 nS; VDD = 5.0V ±5% for 70 nS)
PARAMETER
CONDITIONS
Input Pulse Levels
Input Rise/Fall Time
Input/Output Timing Level
Output Load
0V to 3V
<5 nS
1.5V/1.5V
1 TTL Gate and CL = 100 pF for 90/120 nS
CL = 30 pF for 70 nS
AC Test Load and Waveform
+5V
DOUT
100 pF for 90/120 nS
30 pF for 70 nS
(Including Jig and Scope)
1.8K _Ω
1.3K _Ω
Input
3V
0V
1.5V
Test Point
Output
1.5V
Test Point
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Publication Release Date: March 26, 2002
Revision A3