W29C022 Datasheet, PDF (10/20 Pages) Winbond – 256K x 8 CMOS FLASH MEMORY

W29C022
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Power Supply Voltage to VSS Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential Except A9
Transient Voltage (<20 nS) on Any Pin to Ground Potential
Voltage on A9 and #OE Pin to Ground Potential
RATING
-0.5 to 7.0
0 to +70
-65 to +150
-0.5 to VDD +1.0
-1.0 to VDD +1.0
-0.5 to 12.5
UNIT
V
°C
°C
V
V
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
Power Supply Current
Standby VDD Current
(TTL input)
Standby VDD Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
CMOS
ICC
ISB1
ISB2
#CE = #OE = VIL, #WE = VIH,
all DQs open
Address inputs = VIL/VIH,
at f = 5 MHz
#CE = #OE = VIL, #WE = VIH,
all DQs open
Address inputs = VIL/VIH,
at f = 2 MHz
#CE = VIH, all DQs open
Other inputs = VIL/VIH
#CE = VDD -0.3V, all DQs open
ILI VIN = Vss to VDD
ILO VIN = Vss to VDD
VIL
-
VIH
-
VOL IOL = 2.0 mA
VOH1 IOH = -400 µA
VOH2 IOH = -100 µA; VDD = 4.5V
LIMITS
MIN. TYP. MAX.
-
-
50
-
-
30
-
2
3
-
20 100
-
-
10
-
-
10
-
-
0.8
2.0
-
-
-
-
0.45
2.4
-
-
4.2
-
-
UNIT
mA
mA
µA
µA
µA
V
V
V
V
V
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