MMBT3946DW1T1 Datasheet, PDF (6/11 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistors

WILLAS
MMBT3946DW^F1^MT_T¹1_H²_R⁰_U^-M+
Dua1.0lAGSUeRFnAeCErMaOlUPNTuSCrHpOToTKsYe_BAT_Rr_Ra_IERn_Rs_ECis_TIFt_Io_ERr_Ss_{-20V- 200V}
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
TYPICAL ELECTRICAL CHARACTER^PIS^aT^cIC^kS^{age outline}
• Batch process design, excellent power _Mdis_Msi_Bpa_Tt₃io₉n₄o₆f_Dfe_Wrs_1T1
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in orde(Nr tPoN)
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage dhroPpA. RAMETERS
0.146(3.7)
0.130(3.3)
• High surge capability.
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
• Guardring for overvoltage protection.
30^•0^{Ultra high-speed switching.}
100
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environme⁽n^Nt^Pa^Nl s⁾tandards of
50
(NPN)
MIL-STD-19500 /228
20_•0_{RoHS product for packing code suffix "G"}
Halogen free product for packing code suffix "H"
20
Mechanical data
100
10
• Epoxy : UL94-V0 rated flame retardant
7_•0 _{Case : Molded plastic, SOD-123H}
5
5•0 Terminals :Plated terminals, solderable per MIL-STD-750,
2
Method 2026
0.031(0.8) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
3^•0 ^{Polarity : Indicated by cathode band}
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
• Mounting Pos_ICit_,io_Cn_O:_LA_LEn_Cy_{TOR CURRENT (mA)}
• Weight : Appr_Fo_ix_gim_ura_ete₁d_1.0_C.0_u1_r1_reg_nra_t m_Gain
1
0.1
Dimensions in inches and (millimeters)
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating²s⁰at 25℃ ambient temperature unless otherwise specified.
10
Single₁p₀hase half wave, 60Hz, resistive of in_(Ndu_Pc_Nt₎ive load.
7.0
For capacitive load, derate current by 20%
5.0
(NPN)
5.0
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
12
1³3^.0
14
15
16
18
10
115 120
Maximu₂m_.0 Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximu¹m^.0 DC Blocking Voltage
Maximu₀m_.5 Average Forward Rectified Current
VRRM
20
3₂0_.0
40
50
60
VRMS
14
21
28
35
42
80
100
150
200
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
IO
1.0
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superim⁰p^.2o₀s_.e₁d on ra₀te_.2d lo₀a_.d₃(JED_0.E₅C meth₁o_.d₀)
2.0 3.0
IFSM
5.0
Typical Thermal Resistan_Ic_Ce_, (_CN_Oo_Lte_LE2)_{CTOR CURRENT (m}R_AΘ₎ JA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature^FR^igan^ug^re^{e 13. Input Impedance} TJ
0.7
0.5
30
10
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
IC, COLLECTO⁴R⁰CURRENT (mA)
120
-55 to +125 Figure 14. Voltage Feedback-R55attoio+150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.