MMBT3946DW1T1 Datasheet, PDF (1/11 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistors

WILLAS
MMBT3946D^FW^M1_T¹T_H²1_R⁰_U^-M+
Du_1.a_0Al_SG_URe_FAn_CEe_Mr_Oa_Ul_NTP_Su_CHr_Op_TTo_KYs_Be_ART_RIr_Ea_{R R}n_Es_CTi_Is_FIEt_Ro_Sr_-2s_{0V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Loopwti_{TmphirezoMefiblM}eosa_Bur_Tdrf3as_9pc4ea_6cmDeo.Wun₁t_Ted₁ a_dp_ep_vl_ii_cc_eat_ii_so_an _sin_pio_nr_–d_oe_fr_ft_oo_{f our popular}
SOD-123H
• L_So_Ow_Tp_–o₂w₃e_/Sr l_Oos_Ts_–,₃h₂ig₃h_the_rf_efi_ec_–ie_len_ac_dy._{ed device. It is designed for general}
• H_pi_ug_rh_pc_ou_serre_amnt_pc_la_ifp_ia_erbi_ali_pty_p,_ll_io_cw_atif_oo_nrw_s a_ar_nd_dv_io_slt_ha_og_ue_sd_edro_ip_n. _{the SOT–363}
• High surge capability.
• G^siu^xa^–r^ld^er^ain^dg^edfo^sr^uo^rv^fae^crv^eo^mlta^og^ue^ntp^pro^at^ce^kc^at^gio^en^..^{By putting two discrete devices in}
• U_ol_ntr_ea_ph_aig_ckh_a-s_gp_ee_, e_thd_issw_di_et_vch_icin_eg_i._{s ideal for low–power surface mount}
• S_ai_pli_pc_lo_in_cae_tp_ioit_na_sx_wia_hl p_el_ra_en_ba_or_ac_rh_dip_s,_pm_ace_eta_il_ss_ail_tic_ao_pn_reju_mn_ic_uti_mon_. .
• Lead-free parts meet environmental standards of
MIL-•ShT_FD_E,-110905–0300/0228
• RHoaHloSg_•eLpnr_oof_wrdeueVctp_Cfr_Eoo₍r_sdapu_t)ac_, ct_<kfo₀inr_.g_4pacVockdiengsucfofidxe"Gsu"ffix _"H"
Mec^•h^Sa^imn^pi^lic^fia^esl^Cd^ira^cutⁱa^{t Design}
• Epox^•y^R: ^eU^dL^u9^c4^e-^sV^B0 ^ora^at^re^dd^Sf^pla^am^cee retardant
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
6
5_0.071(14.8)
0.056(1.4)
1
2
3
SOT-363
0.040(1.0)
0.024(0.6)
• Case^• :^RM^eo^dl^ud^ce^ed^sp^Cla^os^mtic^p,^oSⁿO^enD^t-^C12^o3^uH^nt
• Term^•in^Aa^vl^asⁱ:^lP^abla^leteⁱdⁿt⁸er^mm^min^,a⁷ls^–,ⁱⁿs^co^hld^/3e^,r⁰a⁰b⁰le^Upⁿeⁱr^tM^TaIL^p-^eS^aTⁿD^d-^R75^e0^e,l
0.031(0.8) Typ.
0.031(0.8) Typ.
We declare that the material of product
• DevicMeeMthaordki2n0g2:M6 MBT3946DW1T1 = 46
compliance with RoHS requirements.
MA^• X^PI^oM^laU^ritM^{y : I}R^ndA^icT^aIN^teG^{d b}S^{y cathode band}
• Moun_Rti_an_tg_inP_gosition : Any
Symbol
•_CW_oe_lleig_ch_tt_o:_rA_-Epp_mro_itx_teim_r a_Vte_od_lt0_a._g0_e11 gram _{V CEO}
Value
Unit
Vdc
Dimensions in inches and (millimeters)
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
(NP_MN_A)_{XIMUM RATINGS AND ELECTRICA}40_{L CHARACTERISTICS}
Ratings at 25⁽℃^PNa^Pm⁾bient temperature unless otherwise specified^-.⁴⁰
Single p_Cha_os_le_leh_ca_tolf _rw_-Bav_ae_s, _e60H_Vz_o,_ltr_aes_gis_etive of inductiv_Ve _Clo_Ba_Od.
For capacitiv_(Ne l_Poa_Nd₎, derate current by 20%
60
Vdc
3
2
1
(PNP) ^RATINGS
MMaarxkiminugm_EC_moRde_ie_{tctuerrre-nBtaPseeak RVeovletrasge eVoltage}
Maximum RM⁽S^NV^Po^Nlta⁾ge
Maximum DC⁽B^Plo^Nck^Pin⁾g Voltage
Maximum^CA^ov^le^lera^cg^te^orFo^Crw^ua^rrrd^enR^te^-c^Ctif^oieⁿd^tiCⁿu^urr^oe^unt^s
SYMBOL
V _EVBRORM
FM1_-2₄0₀-MH
12
20
FM130-MH FM140-MH
13
30
Vdc₄₁₀₄
FM150-MH
15
50
FM160-MH
16 ^Q1
60
FM180-MH
18
80
FM1100-MH FM1150-MH FM1200-MH _U
10 _Q2 115
100
150
120
200 V
VRMS
1⁶4^.0 21
28
35
42
56
70
105
140 ^V
VDC
-₂5₀.0 ₃₀
40
50
60
80
100
150
200 ^V
I _{C IO}
mAdc
4
5
6
1.0
A
Peak Forward⁽S^Nur^Pge^NC⁾urrent 8.3 ms single half sine-wave
superimposed ⁽o^Pn ^Nrat^Ped⁾ load (JEDEC method)
IFSM
200
-200
Typical TEhleercmtarloRsetsaisttiacnDceis(Ncohtea2rg) e
E_SR_DΘJA HBM>16000, V
Typical Junction Capacitance (Note 1)
OStpoerar_Tagt_{HeinTgEeTRmeMpmepAraeLtruarteuC}rRe_HaRnAagn_RegAe _CTERISTICS
Characteristic
CJ
TJ
TSTG
Symbol
MM>2000
-55 to +125
Max
Unit
0MBT3946DW1T1*
30
*Q1 PNP
A
Q2 NPN
40
℃
O₁₂R₀DERING INFORMATION
Device
M^-5a⁵r^tk^oi⁺n¹g⁵⁰ Shipping
MMB^-T⁶3⁵94^t6^oD⁺W¹⁷1⁵T1 46
3000Units/Reel
Total Packa^Cg^He^ARD^ACis^Ts^Ei^Rp^Ia^St^Tio^ICn^S(1)
PS_DYMBOL ^FM121⁰5^-M0^{H FM130-M}m^HW^{FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH} U
Maximum Forward V_Tol_Ata₌ge₂a₅t _°1_C.0A DC
VF
Maxim_Tu_hm_eA_rmve_ara_lg_Re _eR_se_iv_se_tr_ase_ncC_eurr_Je_un_nt a_ct_tio@_nT A=25℃
Rated DC Blocking Voltage
@T A=125℃
R_{θ J A}^IR
to Ambient
0.50
833
°C/W
0.70
0.85
0.5
10
0.9
0.92 V
m
N1-OMTeEaSs:ured_{Jautn1cMtiHoZnaandndapSpliteodrraevgeerse voltage of 4.0TVJD,TCs. tg –55 to +150 °C}
2- Thermal Re^Ts^eis^mtan^pc^ee ^rF^aro^tm^urJ^eun^Rct^aioⁿn ^gto^eAmbient
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.