MMBT3946DW1T1 Datasheet, PDF (11/11 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistors

WILLAS
MMBT3946DW^FM1_TT¹_H1²_R⁰_U^-M+
Du₁a_.0l_A G_SURe_Fn_ACe_E r_Ma_OUl_NP_{T S}u_CHr_Op_To_TKs_{Y B}e_ART_Rr_IEa_Rn_REs_Ci_Ts_IFt_IEo_RSrs_{-20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
SOT-363
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection. _.087(2.20)
• Ultra high-speed switching.
•
Silicon
epitaxial
planar
chip,
metal
.071(1.80)
silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.030(0.75)
Method 2026
.021(0.55)
• Polarity : Indicated by cathode band
0.031(0.8) Typ.
0.031(0.8) Typ.
.010(0.25)
Di^.m⁰e⁰n³si⁽o⁰ns^.0in⁸in⁾ches and (millimeters)
• Mounting Position : Any _.056(1.40)
• Weight : Approximated 0.01_.01₄g₇ra₍₁m_.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, de^.r⁰a⁰te⁴c⁽u⁰r^.r¹en⁰t⁾b^My^A2^X0%^.
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
.016^V(^R0^R.^M40) ²⁰
30
40
50
60
VRMS
14
21
28
35
42
.004(0.10)
VDC
20
30
40
50
60
18
10
115 120
80
100
150
200
56
70
105
140
80
100
150
200
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
Typical Thermal Resistance (Note 2) DimensioRnΘsJAin inches and (millimeters)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
Storage Temperature Range
TSTG
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS ^{0.5 mm (min}S⁾YMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
0.5
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
1.9 mm
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.