SE9435LT1 Datasheet, PDF (4/4 Pages) WILLAS ELECTRONIC CORP – 30V P-Channel Enhancement-Mode MOSFET

WILLAS
1.0³A⁰S^VUR^PF^-A^CCE^hM^aOⁿUⁿN^eT^lS^ECHⁿO^hT^aTKⁿY^cB^eA^mRR^eIEⁿR^t-R^MEC^oT^dIF^eIER^MS^O-2^S0V^F- ^E20^T0V
SOD-123+ PACKAGE
FM120-M+
SE9435LT^T1^HRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
SOT-23
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junctio_.1n._22(3.10)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
.106(2.70)
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
• Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 g_.0ra₈m_0(2.04)
MAXIMUM RATING^.S⁰⁷A⁰N⁽D^1.E⁷L⁸E⁾ CTRICAL CHARACTERISTICS
.008(0.20)
.003(0.08)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Rev_.e₀rs₀e₄V₍o₀lta_.g₁e_0)MAX. VRRM 20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
1.0
Amps
.020(0.50) ^{Peak Forward Surge Current 8.3 ms single half sine-wave} _IFSM
30
superimposed on rated load (JEDEC method)
.012(0.30)
Typical Thermal Resistance (Note 2)
RΘJA
40
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
CJ
120
Di^Tm^J ensions in^-5in⁵ c^toh⁺e¹s²⁵and (millimeters)
TSTG
- 65 to +175
-55 to +150
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125⁰℃^.037
IR
0.95
0.037
0.5
0.95
10
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
2012-06
2012-10
0.035
0.9
0.031
0.8
inches
mm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.