SE9435LT1 Datasheet, PDF (2/4 Pages) WILLAS ELECTRONIC CORP – 30V P-Channel Enhancement-Mode MOSFET

WILLAS
1.0³A⁰S^VUR^PFA^-CCE^hM^aOⁿUⁿN^eT^lS^ECHⁿO^hT^aTKⁿY^cB^eA^mRR^eIEⁿR^t-R^MEC^oT^dIF^eIER^MS^O-20^SV^F- 2^E00^TV
SOD-123+ PACKAGE
FM120-M+
SE9435LT^T1^HRU
FM1200-M+
Pb Free Product
ELE_•^FC_B^eT_aR_t^a_cI_h^tC^u_pA_r^r_oL^e_ce^sC_ssH_dA_eR_siA_gnC_{, e}T_xE_cR_elI_leS_nT_t I_pC_oS_{wer dissipation offers}
Package outline
better reverse leakage current and thermal resistance.
Sym^{• L}b^oo^wl^profP^ilear^sa^um^rfae^ct^ee^mr ^{ounted application in order to}
optimize board space.
Sta• tLicow power loss, high efficiency.
Test Condition
BV^•• _DHHSiiSgghh
c
s
ur_Dre_rn_at_inc_-a_Sp_oa_ub_ril_cit_ey,_Blo_rew_af_ko_drw_oa_wr_nd
urge capability.
v_Vo_olt_lta_ag_ge_edro
p
.
V_GS = 0V, I_D = -250uA
R_D•_SG_(ou_n)ardrinDgrafoinr o-SveoruvrocletaOgen-pSrotatetectRioens. istance
V_GS = -4.5V, I_D = -4.2A
R_D^••_SSU(oilnlti)^rcaohnigeD^hp-r_itsa_api_xn^ei-_aeS_ldo_psu_lawr_nc^itae^crhO_cinhn^gi-_p.S_, t_ma_ete_taR_{l s}e_is_lii_cs_ota_nn_juc_ne_ction. V_GS = -10V, I_D = -5.3A
SOD-123H
Min Typ
0.146(3.7)
0.130(3.3)
-30
70.0
50.0
Max
0.012(0.3) Typ.
100.0
0.071(1.8)
70.0 ^0.056(1.4)
V_G^• _S^L_(t^e_h^a₎ ^d-freG^e a^pt^ae^rtT^sh^mre^es^eh^{t e}oⁿld^viV^rooⁿlt^ma^egⁿe^{tal standards of}
MIL-STD-19500 /228
I•_DSR_SoHS proZdeurcot fGoraptaecVkinogltacogdeeDsuraffixn"CGu" rrent
Halogen free product for packing code suffix "H"
I_MGSSechaG_na_it_ce _aBo_l d_dy_aL_te_aakage
•^gfE^s poxy : U^FL^o9^rw4-^aV^r0^d r^Ta^rt^aeⁿd^sfl^ca^omⁿe^dure^ct^ta^arⁿd^ca^ent
V_DS =V_GS, I_D = -250uA
V_DS = -24V, V_GS = 0V
V_GS = ± 20V, V_DS = 0V
V_DS = -10V, I_D = -5.3A
-1
-1.7
-3
1
±100
10
0.040(1.0)
0.024(0.6)
Dy^•n^Ca^am^seic^{: 3M) olded plastic, SOD-123H}
0.031(0.8) Typ.
0.031(0.8) Typ.
,
•_QT_germina_Tls_o:_tP_al_la_Gte_ad_tt_eer_Cm_hi_ana_rgls_e, solderable per MIL-STD-750
28
Method 2026
Q_{• gPsol}
arity
Gate-Source
: Indicated by
Charge
cathode
ba
nd
V_DS =-15V, I_D = -5.3A
V_GS = -10V
3
Dimensions in inches and (millimeters)
Q_{• gMdountin}G_{g P}at_oe_s-_iD_tiora_ni_:n_AC_nh_y arge
7
Unit
V
mΩ
V
uA
nA
S
nC
t_d•_(oW_n)eight :TAuprpnr-oOxnimDateelady0.T0i1m1egram
9
t_r
M^TA^uX^rnIM^-OUⁿM^RiR^seA^TTⁱI^mN^eGS AND ELECTRICA_IVDL^D₌^DC_-=H₁A^-A1R_,5A^VV,C_G^R_ET_NLE₌₌R_-1I₁S^50ΩT_VICS
15
ns
Ratingtsd(aotff)25℃ aTmubrinen-Ot tfefmDpeelraayturTeimuneless otherwise specified. _{RG = 6}
75
Single p_th_fase half _Tw_ua_rv_ne_-,_O60_ffH_Fz,_ar_le_l s_Tis_imtiv_ee of inductive load.
40
For capacitive load, derate current by 20%
C_iss
Inpu_Rt_AC_TIa_Np_Ga_Scitance
SYMBOL
MarkingCC_oo_sd_se Output Capacitance
Maximu_Cm_rR_ssecurren_Rt P_ee_va_ek_rR_se_eve_Tr_rs_ae_nV_so_fl_eta_rge_CapacitanceVRRM
Maximum RMS Voltage
VRMS
FM1₁₂2₂₀0_Vf-₌M_DH_S1=F_.0M_-1_131M3₃₀₅0_H-_VM_z,H_VFM_G1_4S14₀₄₌0-M₀H_VFM₅₁15₀₅0-MH
14
21
28
35
FM160-MH
16
60
42
FM180-M⁷H⁴F⁵M1100-MH
18 440 10
80
100
120
56
70
FM1150-MH
115
150
105
FM1200-MH
p1F20
200
140
UNIT
Volts
Volts
Maxim^Su^om^uD^rC^cB^el^-o^Dck^rin^agⁱⁿVo^Dltaⁱg^oe^de
VDC
20
30
40
50
60
80
100
150
200 ^Volts
MaximumI_SAverage FMoarwxa.rdDRioedcteifieFdoCrwurarerndt Current IO
1.0
-2.6
A
Amps
Peak Fo^VrwSaDrd Surge DCuiorrdenet 8F.3omrws asirndgleVhoalltfasginee-wave _IFSM
superimpos_Ne_od_teon_Pr_ua_:lt_se_ed _tl_eo_sa_td_{: p}(_uJE_lsD_e E_wC_idtm_he_<t₌ho₃d₀)_{0us, duty cycle<= 2%}
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
I_S = -2.6A, V_GS = 0V
-55 to +125
30
-1.3
40
120
- 65 to +175
-55 to +150
V
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.