SE9435LT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – 30V P-Channel Enhancement-Mode MOSFET

WILLAS
1.0³A⁰S^VUR^PFA^-CCE^hM^aOⁿUⁿN^eT^lS^ECHⁿO^hT^aTKⁿY^cB^eA^mRR^eIEⁿR^t-R^MEC^oT^dIF^eIER^MS^O-20^SV^F- 2^E00^TV
SOD-123+ PACKAGE
FM120-M+
SE9435LT^T1^HRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
•
o_Vp_Dti_Sm₌ize_-3b₀oa_Vrd space.
Low power loss, high efficiency.
• H^Rig_Dh_S(c_Ou_Nrr₎e^,n^Vt c_ga_sp^@ab^-il¹it⁰y,^Vlo^,w^If_do_sr^@war^-d⁵v^.3ol^Atage⁼dr⁷o⁰p.^mΩ
•
•
H_Rig_Dh_S(s_Ou_Nrg_),e _Vca_gp_sa_@bili_-t₄y._{.5V, Ids@-4.2A}
Guardring for overvoltage protection.
=
100mΩ
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• L_Fe_ead_a-f_tre_ue_rp_ea_srts meet environmental standards of
MIL-STD-19500 /228
• R^Ao^dH^vS^anp^cro^ed^du^tc^rt^efⁿo^cr^hpa^pc^roki^cn^eg^sc^so^td^ee^chsⁿuf^ofi^lx^og"G^y "
H_Ha_il_go_hge_Dn_ef_nre_se_itypr_Co_ed_lu_l c_Dt _efo_sr_igp_nac_Fk_oin_rg_Uc_lto_rd_ae_Ls_ou_wffi_Ox "_nH_-R" _esistance
M_Ie_mc_prh_ova_edn_Si_hc_oa_otl_-Td_hra_out_ga_{h FOM}
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-23
0.040(1.0)
0.024(0.6)
• C_Pa_bs_-e_F:_rM_eeold_pe_ad_cp_kl_as_gt_eic,_isSO_aD_va-1_il2_a3_bH_le
,
• T_Rer_om_Hin_Sa_pls_r:_oP_dla_ut_ce_td_ft_oe_rrm_pain_ca_kls_in, _gso_cld_oe_dr_eab_sle_ufp_fie_xr _”M_GIL_” -STD-750
0.031(0.8) Typ.
3 _D ^{0.031(0.8) Typ.}
Halogen f^Mre^ee^thp^odro²d⁰u²c⁶t for packing code suffix “H”
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• W▼eigShti:mAppplreoxDimraivteed R0.0e1q1ugirraemment
G
1
2S
▼ S_Mm_Aa_Xll_IMP_Ua_Mck_Ra_Ag_Te_INO_Gu_Stli_An_Ne_{D ELECTRICAL CHARACTERISTICS}
Ratings at ▼25℃Suamrfbaiecnet teMmopeurantutreDuenvleiscseotherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
Maximum Recurrent Peak Reverse Voltage
Maximum RM^OS^rV^do^elta^rigⁿe^{g Information}
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
Maximum DC Block^Din^eg^vV^icol^etage
Marking _{VDC S}2_h0_ipping30
40
50
60
18
10
115 120
80
100
150
200 Volts
56
70
105
140 ^Volts
80
100
150
200 ^Volts
Maximum AveragSeEF9o4r3w5aLrdT1Rectified Current P94
IO ^{3000/Tape&Reel}
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
Amps
Typical
Typical
TJuhnecrmt_MioanlaRC_xea_isp_miasct_uaitn_{macnecRe(N(aNot}toe_itne2g)1)_s
and
Therma^Rl_C^ΘC_JJAharacteristics
(T_A
=
25^oC
unless
40
othe₁r₂w₀ ise
noted)
℃/W
PF
Operating Tem_Sp_yer_matu_br_oe_lRange
Parameter ^TJ
-55 to +125
-5_L5_imto_it+150
Unit
℃
Storage Tempera_Vtu_Dre_S Range
Drain-Source V^TSo^Tlt^Gage
- 65 to +175
-30
℃
V
V_GC_SHARACTERISTICGSate-Source SVYoMltBaOgLeFM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH F±M121000-MH FM1150-MH FM1200-MH UNIT
Maximum Forward_IV_Doltage at 1.0A DC _{Continuous Dra}V_inF _Current
0.50
Maximum
Rated DC
Average Reverse
Blockin^IgDVMoltage
Current
at
@T A=25℃
P@ulTsAe=d12D5r℃ain
IR
Current
1)
0.70
0.5
10
0.85_-5.3
-20
0.9
0.92
A
Volts
mAmps
NOTES:
1- Measured
at
1
MH^PZ^D and
applied
Maximum Power
reverse voltage of 4.0 VDC.
Dissipation
TA = 25^oC
TA = 75^oC
2- Thermal Resistance From Junction to Ambient
T_J, T_stg
Operating Junction and Storage Temperature Range
1.4
W
0.8
-55 to 150
o_C
R_θJC
Junction-to-Case Thermal Resistance
50
o_C/W
R_θJA
Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾
90
2012-06
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in² 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.