MMBTA9XLT1 Datasheet, PDF (4/4 Pages) WILLAS ELECTRONIC CORP – HighVoltageTransistor

WILLAS
FM120-M+
MMBTA9xLT^T1^HRU
1.0A SUHRFAigCEhMVOUoNlTtaSCgHeOTTTKrYaBnARsRiIsERtoRErCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop. SOT-23
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standar^.d¹s²o²f ^(3.10)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.106(2.70)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.01_.01 ₈g₀ra₍m_2.04)
MAXIMUM RATIN^.0G⁷S⁰⁽A¹N^.7D⁸⁾ELECTRICAL CHARACTERISTICS
.008(0.20)
.003(0.08)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
.004(0.10)MAX.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 Volts
VRMS
14
21
28
35
42
56
70
105
140 ^Volts
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
.020(0.50)
IF.S0M12(0.30)
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
Dimen_Ts_J ions in inch_-5e₅s_toa₊n₁d₂₅(millimeters)
Storage Temperature Range
TSTG
1.0
30
40
120
- 65 to +175
-55 to +150
Amps
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.037
0.50
0.037
0.95
0.70
0.85
0.9
0.92 Volts
0.9IR5
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
2012-06
2012-11
0.035
0.9
0.031
0.8
inches
mm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.