MMBTA9XLT1 Datasheet, PDF (2/4 Pages) WILLAS ELECTRONIC CORP – HighVoltageTransistor

WILLAS
FM120-M+
MMBTA9xLT^T1^HRU
1.0A SUHRFiAgCEhMVOUoNlTtaSCgHeOTTTKrYaBnAsRRiIsERtoRErCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
EbLeEttCerTrReIvCeArsLe CleHakAaRgAe CcuTrEreRnItSaTnIdCtSh(eTrAma=l 2re5s°iCstuannclees.s otherwise noted.)
• Low_Chp_ar_ro_af_cil_te_ers_isu_tr_icface mounted application in order to
optimize board space.
Symbol
SOD-123H
Min
Max
•_OL_Fo_Fw _Cpo_Hw_Ae_Rr l_Ao_Css_T,_Eh_Rig_Ih_Se_Tf_If_Cic_Siency.
• High current capability, low forward voltage drop.
• Hig^Ch^os^llu^ecrg^toe^r–c^Ea^mpa^ittb^ei^rli^Bty^r.^{eakdown Voltage(3)}
V(BR)CEO
0.146(3.7)
0.130(3.3)
• Gu(aICrd=rin–1g.0fomr oAvdec,rvIBol=ta0g)e protection.
MMBTA92
–300
—
• Ultra high-speed switching.
MMBTA93
–200
—
• Sili_Cc_oo_ln_lee_ctp_oi_rt_–a_Bx_aia_sl_epl_Ba_rn_ea_ar_kc_dh_owip_n, m_Voe_lt_taa_gl _esilicon junction.
• LMeIaL_(Id-_{CS-f=TreD–}e_{1-01p09a5rµ}t0s_{A0md/c2e,2eIE8t} e₌n₀v₎ironmental standards of _MMBTA92
• RoHS product for packing code suffix "G"
MMBTA93
V(BR)CBO
–300
—
–200
—
Hal_Eo_mge_itn_tef_rr_–e_Be_ap_sr_eod_Bu_rc_et_af_ko_dr_op_wa_nck_Vin_og_ltac_go_ede suffix "H"
Me₍c_IEh₌a_–1n₀i₀c_µa_Adl_cd_{, IC}a₌ta₀₎
V(BR)EBO
–5.0
—
• Epo_Cx_oy_lle:_cU_toL_r9_C4_u-V_to0_ff r_Ca_ute_rrd_enfl_tame retardant
ICBO
• Ca(seVC:BM=ol–d2e0d0Vpldacs,tiIcE, =S0O)D-123H
•
Ter⁽m^ViCnBal⁼s
–_:P30_la0_tV_ed_dc_t,_eI_rE_m=_in0_a)_ls,
solderable
per
,
MIL-STD-750
—
0.031(0.8) Typ.
—
–0.1
–100
Unit
0.012(0.3) Typ.
Vdc
0.071(1.8)
0.056(1.4)
Vdc
Vdc
0.040(1.0)
0.024(0.6)
µAdc
0.031(0.8) Typ.
CollectorMCeuttohfof dC2ur0r2en6t
( VEB = –6.0Vdc, IC = 0)
• Pol₍a_Vri_Et_By₌: I_–n₅d_.0ic_Va_dt_ce_,d_Ib_C y₌c₀a₎thode band
IEBO
—
–0.05
µAdc
Dimension_—s in inches and_–1(m₀i₀llimeters) _µAdc
• Mounting Position : Any
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
• Weight : Approximated 0.011 gram
Characteristic
Symbol
Min
Max
Unit
ON CHA^MR^AXC^IT^ME^UR^MIST^RIC^AS^TI(^N3)^{GS AND ELECTRICAL CHARACTERISTICS}
Ratings at 2D5C℃Caumrrebniet nGtateinmperature unless otherwise specified.
hFE
—
Single phas(eI Ch=a–lf1w.0amveA,d6c0,HVzC,Ere=s–is1t0ivVedocf)inductive load. Both Types
25
––
For capaciti(vIeCl=oa–d1,0dmerAadtec,cVurCrEen=t–b1y02V0d%c)
Both Types
40
––
(I C = –30m_RA_Ad_Tc_I,_NV_GC_SE =–10 Vdc)
Marking Code
Maximum Re^Ccu^or^lr^leen^ctt^oP^r–ea^Ek^mR^ite^tev^re^Srs^ae^tuV^ro^al^ttⁱa^ogⁿe^Voltage
Maximum RM^(IS^CV⁼o^–lta²g⁰e^{mAdc, I B = –2.0 mAdc)}
Maximum DC_BB_al_so_ec_–ki_En_mg _iV_tto_el_rta_Sg_ae_{turation Voltage}
Maximum Ave_(Ira_Cg₌e_–F₂o₀r_mwa_Ar_dd_cR_, e_I c_Bt₌ifie_–d_2.C₀u_mrre_An_dt_c)
SYMBOL ^MFM^M12^B0^T-M^AH⁹²FM130-MH FM140-MH FM150-MH FM²1⁵60-MH FM18^–0^–-MH FM1100-MH FM1150-MH FM1200-MH UNIT
MM₁B₂TA93 ₁₃
14
15
2₁5₆
1^–8^–
10
115 120
VRRM
20
30
40^VCE(sat) 50
60
80
10^V0^dc 150
200 Volts
VRMS ^MM1^B4^TA92 21
28
35
–₄–₂
5^–6^0.5
70
105
140 ^Volts
MMBTA93
––
–0.5
VDC
20
30
40
50
60
80
100
150
200 ^Volts
IO
V BE(sat)
— _1.0 –0.9
Vdc
Amps
Peak Fo_Srw_Mar_Ad _LSu_Lr_–ge_SC_IGur_Nre_Ant_L8.3_Cm_Hs_As_Ring_Ale_Ch_Tal_Ef s_Rin_Ie_S-w_Ta_Iv_Ce_{S IFSM}
superimposed _Con_urr_ra_ete_nd_t–lo_Ga_ad_in(J_—ED_BEC_anm_de_wth_ido_td_h) _{Product(3),(4)}
Typical Therm_(Ial_CR₌e_–s₁is₀ta_mn_Ace_dc(N_{, V}ote_CE2₌)_{–20Vdc, f = 100MH}R_z)ΘJA
fT
Typical Juncti_Con_olC_lea_cp_toa_rci_–ta_Bnc_ae_se(N_Co_ate_pa1_c)_itance
Operating Tem_(Vpe_Cr_Ba₌tu_–re₂₀Ra_Vn_dg_ce_{, I E = 0, f = 1.0 MHz)}
CJ
C cb
TJ _MMBTA9^-₂^{55 to +125}
Storage Temperature Range
TSTG _MMBTA93
30
50 ₄₀
––
MHz
120
pF
––
6.0 ^{-55 to +150}
-_––65 to +175_8.0
Amps
℃/W
PF
℃
℃
3. Pulse _CTe_Hs_At:_RP_Au_Cls_Te_ERW_ISid_Tth_IC<_S 300 µs, Duty_SC_Yy_Mc_Ble_O<_{L F}2_M.0₁₂%_0-._{MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.