MMBTA9XLT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – HighVoltageTransistor

WILLAS
FM120-M+
MMBTA9xLT^T1^HRU
1.0A SUHRFiAgChE MVOoUNlTtaSCgHeOTTTKrYaBnAsRRisIEtRoRrECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
PNP Silicon • Low profile surface mounted application in order to
optimize board space.
SOD-123H
• Low power loss, high efficiency.
• Hig_Fh_Ecu_Ar_Tre_Un_Rt _Ecapability, low forward voltage drop.
• High surge capability.
• Guar^ƽdr^Hin^igg^hf^vo^or ^lo^tav^ge^er^.voltage protection.
• Ultra^ƽh^Fig^oh^r-^Ts^ep^le^epe^hd^osⁿw^yi^otc^rh^Pi^rn^og^fe. ^{ssional communication equipment applications.}
• SilicoƽnReopHitSaxpiarol dpulacnt aforrcphaipc,kimngetcaol dseiliscuofnfixju"nGc"tion.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
• Lead-frHeaelopgaerntsfrmeeeeptroednuvcitrofonrmpeacnktainlgsctaonddeasrudffsixo"fH"
MIL-STD-19500 /228
• R_DoH_ES_VIp_Cro_Edu_Mc_At f_Ror_Kp_Ia_Nc_Gkin_Ag_Nco_Dde_Os_Ru_Dffi_Ex _R"G_IN" _{G INFORMATION}
Halogen free product for packing code suffix "H"
Mech^Da^evn^ici^ecal data ^Marking
Shipping
•
MMBTA92LT1
Epoxy : UL94-V0 rated
flame
2D
retardant
3000/Tape&Reel
SOT–230.040(1.0)
0.024(0.6)
• Case_M:_MM_Bo_Tl_Ade₉₃d_Lp_Tl₁astic, SOD-123H_2E
3000/Ta_,pe&Reel
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
3
Dimensions in inches and (millimeteCrOs)LLECTOR
• M_Mo_Aun_Xt_Ii_Mng_UP_Mos_Rit_Aio_Tn_IN: A_Gn_Sy
• Weight : Approximated 0.011 gram
Value
Rating
Symbol MMBTA92 MMBTA93 Unit
Co^Mlle^Act^Xor^I–^MEm^Ui^Mtter^RV^Aol^Tta^Ig^Ne^{GS AN}V^DC^EEO^LEC–^T3^R00^ICAL–^C20^H0^ARAVd^Cc^TERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single
phase
Collector–Base Voltage
half wave, 60Hz, resistive
of
induc^Vtiv^Ce^BOload.
–300
–200 Vdc
For capacitive^El^moa^itd^te, ^rd^–e^Br^aa^ste^e c^Vu^or^lr^te^an^gt^eby 20% ^{V EBO}
–5.0
Vdc
1
BASE
2
EMITTER
Collector_RC_Au_Tr_Ir_Nen_Gt_S— Continuous I C _{SYMBOL FM}–₁5₂0₀0_-MH FM130m-MAHdFcM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH _{FM1200-MH UNIT}
Marking Co_Tde_{HERMAL CHARACTERISTICS}
Maximum Recurrent Peak Reverse Voltage
VRRM
Characteristic
Maximum RMS Voltage
VRMS
Total Device Dissipation FR– 5 Board, (1)
Maximum DC Blocking Voltage
TA = 25°C
VDC
12
13
20
30
Symbol
14
21
PD
20
30
14
15
16
40
50
60
Max
Unit
28
35
42
225
mW
40
50
60
18
10
115 120
80
100
150
200 Volts
56
70
105
140 ^Volts
80
100
150
200 ^Volts
Maximum Avera_Dg_ee_rF_ao_terw_aa_br_od_vR_ee₂c₅ti_°fi_Ced Current
IO
1.8
mW/°C ^1.0
Amp
Peak Forward
superimposed
Sonu_TTrr_og^h_aetetae^rC_ld^mDul^a_orera^le_vd^Rn_ict(^ee_J8^s_E.Di3^s_Ditm_sE^as_Cs^nipcsm^eaine^,tg_itoJlhe^un_oⁿhda^c₎ l^tf^iosⁿine^to-w^Aa^mve^bien_I^t_FSM
Typical Thermal^AR^lue^msiⁱsⁿta^an^Sc^ue^b(^sN^to^rate^te2^,)^{(2) TA = 25°C}
Derate above 25°C
Typical Junction Capacitance (Note 1)
RΘJA
CJ
Operating Temp^Te^hra^et^ru^mre^alR^Ra^en^sgⁱe^{stance, Junction to Ambient}TJ
Storage Temper^Ja^utuⁿr^ce^tioRⁿan^agⁿe^{d Storage Temperature} TSTG
RθJA
556
PD
300
2.4
RθJ_-A_{55 to +125} 417
TJ , Tstg
–55 to +150
°C/W
mW ³⁰
40
mW/°C ₁₂₀
°C/W
°C _{- 65 to +175}
-55 to +150
Amp
℃/W
PF
℃
℃
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alum^Ci^Hn^Aa^R=^A0^C.4^TEx^R0^I.^S3^Tx^IC0^S.024 in. 99.5% ^Sa^Ylu^Mm^Bin^Oa^L. ^{FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT}
Maximum For₃w_.a_Prd_ulV_so_elt_Ta_eg_se_t:a_Pt 1_u._l0_seA _WDC_{idth < 300 µs, Duty}V_CF_{ycle < 2.0%.}
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.