SESD9DXXV Datasheet, PDF (3/4 Pages) WILLAS ELECTRONIC CORP – ESD Protection Diode

WILLAS
FM120-M+
SESD9DxxV_THRU
1.0A SURFACE^EM^SO^DUN^PT^roS^tC^eH^cO^tioTTⁿK^DY^ioB^dA^eRRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Fig 3. 8/20 μs Pulse Waveform
• Mounting Position : Any
Dimensions in inches and (millimeters)
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
18
10
115 120
80
100
150
200
56
70
105
140 ^V
80
100
150
200 ^V
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Oper_Fat_ii_gng₄T_.em_Pp_oe_sra_it_tu_ivre_eR₈an_kg_Ve _{contact per IEC}
Storage Temperature Range
61000-4-2-SESD9D5V
CJ
TJ
TSTG
120
-55 to
Fig
+125
5. Negative
8kV
contact
per
IEC^-55
to
+150
- 65 to +175
61000-4-2-SESD9D5V
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.