SESD9DXXV Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – ESD Protection Diode

WILLAS
SESD9Dx^Fx^MV_T¹_H²_R⁰_U^-M+
1.0A SURFACE^EM^SO^DUN^PT^roS^tC^eH^cO^tioTTⁿK^DY^ioB^dA^eRRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
Gener^•a^Lol^opD^wtime^pirs_zoec^fiblr^eoip^saurt_dri^fo^aspcn^{eacmeo. unted application in order to}
The^{• L}S^oE^wS^pD^ow9^eD^{r lo}S^se^sr^, i^heⁱs^ghi^es^ffid^ce^iesⁿi^cg^yn^.ed to protect Voltage
sensitive^••
Hi_cg_oh_mcu_pr_ore_nn_et _nca_tspab_fril_oit_my, l
High surge capability.
o w_ESf o_Dr w_.a r d_Ev_xo_cl_et a_llg_ee_nd_t r
op_c._lamping
capabilit•yG, luoawrdlreinagkfaogr eo,vearnvdoltfaagset prerostpeoctniosne. time provide best
SOD-123H
Features
z Small Body Outline Di⁰⁰m^..1143e⁶⁰⁽⁽n^33..s⁷³⁾⁾ions:
0.012(0.3) Typ.
0.039″ x 0.024″(1.0 mm x 0.60 mm)
z Low Body Height: 0.017″ (0.43 mm) Max
in class^• p^Ur^lo^trt^ae^hcⁱt^gio^hn^-spo^en^edd^se^ws^itig^chnⁱs^ngt^.hat are exposed to ESD. z
• Silicon epitaxial planar chip, metal silicon junction.
Because_{• L}o_ef_adit_-s_fres_em_paa_rll_tss_miz_ee_e,_{t e}it_nvi_is_rons_mui_ete_nd_talf_so_tr_anu_ds_ae_rdsin_of cellular
z
phones, ^MM^IP^L-3^STp^Dl^-a¹y⁹e⁵r⁰s⁰, ^/2d²ig⁸ital cameras and many other z
• RoHS product for packing code suffix "G"
portable a_Hp_ap_lol_gic_ea_nt_fi_ro_en_es_prw_odh_ue_cr_t e_forb_po_aa_cr_kd_ingsp_coa_dc_ee_si_us_ffia_xt_"Ha_" premium.
Stand−off Voltage: 3 V − 12 V
Low Leakage
Response Time is Typically < 1 ns
0.071(1.8)
0.056(1.4)
Mechanical data
Applic^•a^Et^pio^oxn^y s^{: UL94-V0 rated flame retardant}
0.040(1.0)
Complies with the following standa⁰r^.0d²⁴s^(0.6)
z Cel^•lu^Cla^asr ^ep^:h^Mo^on^le^ds^eda^pu^ld^asio^{tic, SOD-123H}
IEC610000.0-341(-02.8) Typ.
,
z MP^•3^Tp^erla^myⁱⁿe^ars^{ls :Plated terminals, solderable per MIL-STD-750} Level 4 15 kV (air discharge)
0.031(0.8) Typ.
z Digital camera^Ms^{ethod 2026}
z
• Polarity : Indicated by cathode band
Portable applications
• Mounting Position : Any
z mo_•b_Wile_eit_ge_hle_t p_{: A}h_po_pn_re_{oximated 0.011 gram}
8 kV(contact discharge)
Dimensions in inches and (millimeters)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
z Pb-Free package is available
RoHS prod^Mu^Ac^Xt f^Io^Mr^Up^Mac^Rki^Ang^TIc^No^Gde^S s^Au^Nff^Dix ^E”G^L”^{ECTRICAL CHARACTERISTICS}
Rat_Hing_as_loa_gt _e25_n℃_frea_emb_pie_ront_dt_uem_ctp_fe_ora_rtu_pr_ae_cu_kn_il_ne_gss_co_oth_de_erw_sis_ue_ffs_ixpe_“c_Hifi_”ed.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
F_Mu_arn_kic_ngt_Cio_odn_eal diagram
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
18
10
115 120
80
100
150
200
56
70
105
140 ^V
80
100
150
200 ^V
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitanc^Se^O(N^Dot^-e⁹1²) ³
CJ
120
Operating Temperature Range
TJ
-55 to +125
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
Maximum Rat_Ci_Hn_Ag_RAs_CTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0_PA_aD_rC_ameter
VF
S^0.y⁵⁰mbol
0.7_V0_alue
0.85 _Unit 0.9
0.92
I^ME^aC^xim6^u1^m00^Av0^e-^r4^ag-2^{e R}(E^evS^erD^se) ^CuC^rreoⁿn^t t^aa^t c^@t ^{T A=25℃}
IR
Rated DC Blocking Voltage
@T A=125℃
ESD Voltage
Per Human Body Model
8 ^0.5
kV
m
10
25
kV
NOTES:
Per Machine Model
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
P_2-e_Ta_hek_rmP_au_{l R}ls_ee_sisP_tano_cw_{e F}e_rr_om(tp_Ju=_nc8_tio/2_n 0_toμ_As_m)_b@_ient T_A=25℃
400
V
P_D
60
W
Junction and Storage Temperature Range
T_J,T_STG
-55 to 150
℃
Lead Solder Temperature – Maximum (10 Second Duration)
T_L
260
℃
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.