SESD9DXXV Datasheet, PDF (2/4 Pages) WILLAS ELECTRONIC CORP – ESD Protection Diode

WILLAS
FM120-M+
SESD9DxxV^THRU
1.0A SURFACE^EM^SO^DUN^PT^roS^tC^eH^cO^tioTTⁿK^DY^ioB^dA^eRRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Electrical Parameter
Features
• Batch process design, excellent power dissipation offers
Symb^bo^el^{tter reverse leakage cu}P^rra^enra^{t a}mⁿe^dt^te^hr^{ermal resistance.}
• Low profile surface mounted application in order to
I_PP^optimizM^ea^bx^oi^am^rdu^sm^paR^cee^.verse Peak Pulse Current
• Low power loss, high efficiency.
V_{•CHigh cu}C_rrla_em_nt p_cain_pg_abV_ilo_itl_yt_,a_lg_owe _f@_orwI_{PaPrd voltage drop.}
V_R^••_WGHM^iugahrdsruW_irnggo^er_fk_ocai_rn^pog^avebP_rilve^itoa^yl.k_tagR_ee_pv_re_or_ts_ee_ctiV_ono_.ltage
I^•_R
•
Ultra h^Migh^a-^xsⁱp^me^ued^msw^Ritc^eh^vin^eg^r.^se
Silicon^VeRpWitMaxial planar chip, m
Leakage
etal silicon
Current
junction.
@
I^•_T ^Lead-frT^ee^es^pt^aC^rtu^sr^mre^en^et^{t environmental standards of}
MIL-STD-19500 /228
V•_BRRoHS pBrordeuackt dfoor wpanckVinogltcaogdees@uffixI_T"G"
Halogen free product for packing code suffix "H"
I_{MF ech}F_ao_nrw_icar_ad_lC_du_arr_te_ant
V_•FEpoxy F_{: U}o_Lrw₉₄a_-r_Vd₀V_rao_tl_eta_dg_fle_am@_{e r}I_eFtardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Electrical Char^Ma^ec^tt^he^odri²s⁰t²i⁶cs (T_A=25℃ unless otherwise noted, V_F=0.9V Max. @ I_F=10mA for all types)
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
P^•ar^Mt^{ounting Position : Any}V_BR
V_F
• Weight : Approximated 0.011 gram
Numbers
I_T
V_RWM
I_R
MAX^MIMⁱⁿU^.M RA^TT^yI^pN^.GS A^MN^aD^x.ELECTRICAL CHARACTERISTICS ^Max.
C
I_F
Typ.
(Note1)
Ratings at 25℃ ambien_Vt temperatu_Vre unless o_Vtherwise spe_mci_Afied.
V
µA
Single phase half wave, 60Hz, resistive of inductive load.
S_FE_orS_cD_ap9_aD_ci3_tivV_e3_{load, de}5_ra._t0_{e current}5_b._y7_20% 6.4
2.5
3.0
1
V
1.25
mA
pF
10
40
SESD9D5V
R⁶A^.T²INGS ^6.8
7.6 _SYMBO1_L ._F0_M120-MH FM51.300-MH FM140-1MH FM150-MH1.F2M5160-MH FM180-M1H0FM1100-MH FM215150-MH _FM1200-MH
S^ME^arS^kinD^g9^CD^od1^e2V 13.5 14.2 15.0
1.0 ¹² 12¹.³0
Maximum Recurrent Peak Reverse Voltage
1_M.C_axa_imp_ua_mci_Rta_Mn_Sc_Ve_oli_tas_gm_e easured at f=1MHz,
V_R=^VV0^RRV_MR,^MST_A=25²¹â„ƒ⁰⁴ .
30
21
14 ₁ 15 _1.21₅6
40
50
60
28
35
42
18 ₁₀ 10
80
100
56
70
15¹¹⁵
150
105
120
200
140 ^V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^V
Maximum Average Forward Rectified Current
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
T_suy_pp_erii_mc_pa_osl_edC_oh_{n r}a_atr_eda_loc_at_de_(Jr_Ei_Ds_Et_Cic_ms_ethod)
IFSM
30
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig 1. Typical Breakdown Voltage
versus Temperature
2012-06
2012-09
Fig 2. Typical Leakage Current versus
Temperature
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.