SCS751G Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – 0.03 Amp Surface Mount Schottky Barrier Rectifiers

WILLAS
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SOD-723_SP_Oa_Dc_-k₁₂a₃g₊e _PACKAGE
FM120-M+
THRU
SCS7_F5_M1G_1200-M
Pb Free Produc
Features
Package outline
•
Batch
better
process
reverse
design, excellent
leakage current a
npdowt^Ehee^{lerrdmcitsarslicirpeaasltiiscothnanaocrffeae.crsteristiccurves(Ta=25OC)}
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power¹⁰loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge 8capability.
Ifsm
t
• Guardring for overvoltage protection.
1000
0.146(3.7)
0.130(3.3)
Rth(j-a)
0.012(0.3) Typ.
• Ultra high-s₆peed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free p₄arts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
R⁰t^.h⁰⁷(j¹-⁽c¹)^.8)
0.056(1.4)
100
Mounted on epoxy board
IM=1mA
IF=10mA
Halogen free2 product for packing code suffix "H"
Mechanical data
• Epoxy : UL9⁰4-V0 rated flame retardant
•
Case
:
0.1
Molded
1 _TIME:t(ms) 10
plast_Ii_Fc_S,_MS_-O_{t C}D_H-_A1_R2_A3_CH_TERISTICS
100
,
• Terminals :Plated terminals, solderable per MIL-STD-750
10
0.001
0.031(0.8) Typ.
1ms ^time
300us
0.040(1.0)
0.1 _TIME:t(s) 10
0.024(0.6)
1000
Rth-t CHARACTERISTICS ^{0.031(0.8) Typ.}
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.05
0.003
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ a_0.m₀₄bient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive loa₀d_.0,₃derate current bDy=210/%2 ^DC
0.002
D=1/2
DC
RAT_SI_iN_n(G_θS_＝180)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code 0.02
Maximum Recurrent Peak Reverse Voltage
12
13
14 _0.00115
Si¹n(⁶θ＝180) ¹⁸
10
115 120
VRRM
20
30
40
50
60
80
100
150
200
Maximum RMS Vo0lt.a0g1e
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Fo⁰rw₀ard Re₀c_.0t₁ified C_0.u₀r₂rent _0.03
0.04 ^IO 0.05
0
0
10^1.0 20
30
40
Peak Forward Surge Current 8.3_Fm_Os^ARs^VWi^En_ARg_Rl^Ae_DGh_CEa_Ul^Rf_REs_Ri^Cn_ETe_N-^IFw_TI：a^EIv^Doe_{(A) IFSM}
REVERSE VOLTAGE:VR(V)
VR-P3_R0CHARACTERISTICS
superimposed on rated load (JEDIEoC-Pmf CetHhAodR)ACTERISTICS
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
0.1
RΘJA
CJ
TJ
TSTG
40
-55 to +125
120
-55 to +150
- 65 to +175
0.1
CHARACTERISTIC0SA
SYMIoBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH F0MA180-MH FM1100-MH^IoFM1150-MH FM1200-MH
Maximum Forward V0.o0l8tage at 1.0A DC 0V
VVFR
t
Maximum Average Reverse Current at
@T A=25℃
D=t/T
VR=2I0RV
Rated DC Blocking ⁰V^.0o⁶ltage_DC
@T A=125^T℃ ^Tj=125℃
0.50
0.08 _0.70
0.06 _DC
0V
0.5
10
0_t.85
T
VR 0.9
D=t/T
VR=20V
Tj=125℃
0.92
NOTES:
0.04 _D=1/2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistanc₀e_.0F₂rom Junction to Ambient
Sin(θ＝180)
0
0
25 50 75 100 125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
0.04 D=1/2
0.02
Sin(θ＝180)
0
0
25
50
75 100 125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.