SCS751G Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – 0.03 Amp Surface Mount Schottky Barrier Rectifiers

WILLAS
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SOD-723_SOP_Da_-c₁k₂a₃g₊e _PACKAGE
FM120-M+
THRU
SCS7_F5_M1₁G_200-M+
Pb Free Produc
Package outline
Features
Electricalcharacteristiccurves(Ta=25^OC)
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
100
optimize board space.
100000
• Low power loss, high efficiency.
10 _{• H}^T_ig^a=_h⁷⁵_c^℃_{urrent capability, low forward1v0o00lt0age drop.}
Ta=_•1_H25_i℃_{gh surge capability.}
1 • Guardring for ov^Te^a=r²v⁵o^℃ltage protection₁.₀₀₀
Ta=125℃
Ta=75℃
SOD-123H
10
0.146(3.7)
0.130(3.3)
f=1MHz
0.012(0.3) Typ.
• Ultra high-spee_Td_as_=-w₂i₅t_℃ching.
Ta=25℃
1
0.1 ^{• Silicon epitaxial planar chip, metal sil}₁^ic₀^o₀ ^{n junction.}
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
0.01
MIL-STD-19500 /228
• RoHS product for packing code suffix "G" ¹⁰
Ta=-25℃
0.001
0
Halogen free product for packing code suffix "H"
1^M00 ^e20^c0 ^h30^a0 ⁿ40ⁱ0^ca50^l0 ^d60^a0 ^t7^a00 800
1
0 5 10 15 20 25 30 35 40
•_FOE_Rp_Wo_Ax_Ry_D: U_VOL_L9_T4_A-_GV_E0_：Vr_Fa₍t_me_Vd₎ flame retardant
REVERSE VOLTAGE：VR(V)
VF-IF CHARACTERISTICS
• Case : Molded plastic, SOD-123H
VR-IR CHARACTERISTICS
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.1
0
5 10 15 20 25 30
0.040(1.0)
REVERSE VOLTAG⁰E^.:⁰V²R⁴⁽(⁰V^.6)⁾
VR-Ct CHARACTERISTICS
0.031(0.8) Typ.
330
Method 2026
1000
• Polarity : Indicated by_Tac₌a₂t₅h_℃ode band ₉₀₀
320
• Mounting Position : A_nn^IF=y^=310mpcAs
800
• Weight : Approximated 0.011 gram ⁷⁰⁰
Ta=25℃
VR=30V
n=30pcs
10
Dimens₉ions in inches and (millimeters)
8
7
Ta=25℃
f=1MHz
VR=0V
n=10pcs
310
600
6
MAXIMUM RATINGS AND 5E00LECTRICAL CHARACTERISTICS 5
30R0 atings at 25℃ ambient temperature unless other⁴w⁰⁰ise specified.
Single phase half wave, 60Hz, resistive of inductiv³e⁰⁰load.
29F0or capacitive load, derate current by 20%
200
AVE:111.0nA
4
3
AVE:1.81pF
2
28_M0_{arking Code}
AVE:30_R4_A.2m_TIV_NGS
100
1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0
0
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VF DISPERSION MAP
Maximum RMS Voltage
VRRM
20
30
40
50
60
IR DISPERSION MAP
VRMS
14
21
28
35
42
80
100
150
200
C₅t₆DISPERS₇IO₀N MAP ₁₀₅
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
2^M0 ^{aximum Average Forward Rectified Current}
30 ^IO
10 ^1.0
Peak
Forward
Surge
Curren_It_fs8_m.3
ms
sing₁le_cyh_calf
sine-wave
25
IFSM
1^s5^{uperimposed on rated load (JEDEC method)}
Typical Thermal Resistance (Not⁸e^.32^m) ^s
20 ^RΘJA
Typical Junction Capacitance (Note 1)
CJ
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
8 ³⁰
40
6 ₁₂₀
Ifsm
8.3ms 8.3ms
1cyc
1_O0 _{perating Temperature Range}
15 _TJ
-55 to +125
-55 to +150
Storage Temperatur_Ae_VR_Ea_:3n_.4g₀e_A
TSTG
10
4 _{- 65 to +175}
5
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
5 ^{SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH F2M160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
VF
AVE:11.7ns _0.50
0.70
0.85
0.9
0.92
M⁰ aximum Average Reverse Current at @T A=25℃ 0 _IR
Rated DC Blocking Voltage
@T A=125℃
IFSM DISRESION MAP
NOTES:
trr DISPERSION MAP
0 0.5
1 ₁₀
10
NUMBER OF CYCLES
100
IFSM-CYCLE CHARACTERISTICS
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.