SCS751G Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – 0.03 Amp Surface Mount Schottky Barrier Rectifiers

WILLAS
30m₁A_.0ASu_SUrf_Ra_Fc_Ae_CM_E o_Mu_On_Ut_NS_Tc_Sh_Co_Htt_Ok_Ty_TB_KYar_Br_Aie_Rr_RR_IEe_Rct_Rif_Eie_Cr_Ts_IF-4_IE0_RV_{S -20V- 200V}
SOD-723_SOP_Dac_-1k₂a₃g₊e _PACKAGE
FM120-M+
THRU
SCS7_F5_M1G_1200-M+
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
zA^• p^Gp^ul^aic^rda^rtⁱⁿio^gn^fos^{r overvoltage protection.}
• Ultra high-speed switching.
Ge_•n_Se_ilr_ia_col r_ne_ec_pti_if_ti_ac_xa_iatio_{l p}n_{lanar chip, metal silicon junction.}
0.071(1.8)
0.056(1.4)
z^•F^LMe^ea_IaLt^du_-S-r^fTe^reDs^e-
parts meet
19500 /228
env
ironmen
tal
s
ta
ndards
of
1)^• S^Rm^oHa^Sll^pp^roo^dw^uce^tr^fom^{r p}o^ald^cktⁱy^ngpe^co. ^{de suffix "G"}
H₍ a_Slo_Oge_Dn_-f₇re₂e₃pr₎oduct for packing code suffix "H"
Mechanical data
2) Low VF
• Epoxy : UL94-V0 rated flame retardant
3) High reliability
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
SOD-723 0.031(0.8) Typ.
zConstructi^Mo^en^{thod 2026}
Si^•lic^Po^on^lare^itp^yit^:a^Ixⁿi^da^icl ^ap^tl^ea^dna^byr ^{cathode band}
Dimensions in inches and (millimeters)
W^•e^Md^oe^ucⁿla^tinre^{g P}th^oa^st^itt^iohⁿe^:m^Ana^yterial of product
co^•m^Wp^eliⁱa^gn^{h t}c^:e^Aw^{p p}it^rh^{o x}R^{i m}o^aH^{t e}S^d r⁰e^.q^{0 1}u¹ir^ge^rm^{a m}ents.
Pb-Free package is available
RoHS prod^Mu^Act^Xfo^IMr p^Ua^Mcki^Rng^ATco^INde^Gs^Suf^Afix^N”^DG”^{ELECTRICAL CHARACTERISTICS}
Ratin_Hgs_ala_ot_g2_e5_n℃_frea_em_pbi_re_on_dt_ute_cm_{t f}p_oe_rra_pt_au_cre_kiu_nn_gle_cs_os_do_eth_se_urw_ffi_is_xe_“s_Hp_”ecified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
zAbsolute max_Rim_Au_Tm_INGra_Stings (Ta=25°C) _{SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
Marking Code
Parameter
Symbol
12 ^Limits 13
14 ^Unit 15
16
18
10
115 120
Maxim^Ru^em^veR^rse^ecu^vr^or^le^tan^gt ^ePe^(ra^ek^peR^te^itv^ive^ers^pe^eV^ako⁾ltage
Reverse voltage (DC)
Maxim_Au_vm_eraR_gM_eS_reV_co_til_ft_ia_eg_de_{forward current}
V_RMVRRM
20 ⁴⁰ 30
40 ^V 50
60
VIo_RVRMS
14
30
30
21
28
V
mA
35
42
80
100
150
200
56
70
105
140
Maxim_Fu_om_rwD_arC_d B_culo_rc_rek_nin_tg_suV_ro_gl_etag_pe_{eak （60Hz・1cyc）}
I_FSM^VDC
20 ₂₀₀ 30
40 _mA 50
60
80
100
150
200
Maxim^Juuⁿm^ctA^iovⁿer^ta^eg^me^pF^eo^rarw^tua^rr^ed Rectified Current
Tj _IO
125
℃
1.0
Storage temperature
Tstg
-40 to +125
℃
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typica^zl ^ETh^lee^crm^tra^icl ^aR^le^cs^his^ata^rn^ac^ce^te(N^rio^st^te^ic2)^(Ta=25°C)
IFSM
RΘJA
Typical Junction Capa^Pci^ata^ran^mce^et(^eN^rote 1)
SymboCl J Min.
Opera^Ft^oin^rg^waT^re^dm^vp^oe^ltr^aa^gtu^ere Range
V_{F TJ}
-
Stora^Rge^evT^ee^rm^sepe^cr^ua^rt^ru^erⁿe^t Range
Capacitance between terminals
I_{R TSTG} -
Ct
-
Typ. Max.
-55 to 0+.13275
-
0.5
2
-
30
40
Unit
120Conditions
V
I_F=1mA
-55 to +150
µA
V_R=30_-V_{65 to +175}
pF
V_R=1V , f=1MHz
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maxi_zmu_Dm_EA_Vv_Ie_Cra_Ege_MR_Ae_Rve_Krs_INe _GCurrent at @T A=25℃
Rated DC Blocking Voltage
Device
@T A=125℃
Marking
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
SCS751G
5
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.