MMBT2222AWT1 Datasheet, PDF (3/3 Pages) Motorola, Inc – General Purpose Transistor

WILLAS
FM120-M+
MMBT2222AWTTH1RU
1G.0AeSnUReFrAaCEl MPOUuNrTpSCoHsOTeTKTY rBaARnRIsERisREtoCTrIFsIERS -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
SOT−323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.087(2.20)
• Silicon epitaxial planar chip, metal silicon_.j₀u₇nc₀t₍io₁n_..₈₀₎
• Lead-free parts meet environmental standards of
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y _{Method 2026}
0.031(0.8) Typ.
0.031(0.8) Typ.
r _{• Polarity : Indicated by cathode band}
a _{• Mounting Position : Any .056(1.40)}
• Weight : Approximated 0.011 gram
.047(1.20)
Dimen_.s₀io₁n₀s i₍n₀in_.c₂h₅es₎ and (millimeters)
.003(0.08)
in MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
lim _{Marking Code}
RATINGS
.004(0.10)MAX.
Maximum Recurrent Peak Reverse Voltage
e _{Maximum RMS Voltage}
Maximum DC Blocking Voltage
Pr ^{Maximum Average Forward Rectified Current}
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 Vo
VRMS
14
21
28
35
42
56
70
105
140 ^Vo
VDC
20
30
40
50
60
80
100
150
200 ^Vo
.016^I(^O0.40)
1.0
Am
.008(0.20) ^{Peak Forward Surge Current 8.3 ms single half sine-wave} _IFSM
30
Am
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Dimen^CT_JJsions in inc_-5h₅e_tos₊a₁₂n₅d (millimeters) ¹²⁰
-55 to +150
P
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SOLDERING FOOTPRINT*
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
V_0.F₆₅
0.50_00.0.6255
0.70
0.85
0.9
0.92 Vo
0_I._R025
0.5
mA
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.9
0.035
1.9
0.075
2012-²1⁰1^12-06
0.7
0.028
ǒ Ǔ _{SCALE 10:1}
mm
inches
WILLA^WS^ILE^LL^AE^SC^ET^LR^EO^CN^TRIC^ONC^IO^CR^CP^O. ^RP.