MMBT2222AWT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – General Purpose Transistor

WILLAS
FM120-M+
MMBT2222AW^THT^R1^U
1G.0AeSUnReFArCaElMPOUuNTrpSCoHOsTeTKYTBrAaRnRIEsRiRsEtCoTIrFsIERS -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
N• LPoNw pSroilfiilceosunrface mounted application in order to
SOD-123H
op_Tt_him_esiz_ee_tb_rao_na_srd_iss_top_ra_sc_ae_r._{e designed for general}
• Low power loss, high efficiency.
•^pH^ui^rg^ph^oc^su^err^aen^mt ^pc^laⁱp^fia^eb^ril^ait^py,^plo^liw^cafo^tir^owⁿa^sr^.d ^Tvo^hl^eta^yge^ard^erop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•^hH^ouig^sh^edsuⁱⁿrg^te^heca^Sp^Oa^Tb^–ili³ty².^{3/SC–70 package which}
•_isG_dua_er_sd_ir_gin_ng_edfor_foo_rve_lr_ov_wolt_pa_og_we p_er_ro_ste_uc_rt_fi_ao_cn._{e mount}
3
COLLECTOR
•_aU_pplt_lr_ia_cah_ti_ig_oh_n-_ss_.peed switching.
• Si_Wlic_eon_dee_cp_li_at_ra_exi_ta_hl_ap_t l_ta_hn_ea_mr c_ah_teip_ri,_am_{l o}e_fta_pl_ros_dil_uic_co_tn junction.
1
BASE
0.071(1.8)
0.056(1.4)
•_coLM_meIaL_pd-_liSa-f_nTrecDee-1_wp9a_it5rht0s_R0mo/2He2e_{S8t r}e_en_qv_uir_iro_en_mm_ee_nn_tsta_. l standards of
•^PR^bo^-FH^rS^eepr^po^ad^cu^kct^af^go^er p^isac^ak^vin^ag^ilc^ao^bd^lee suffix "G"
RHoHalSogpernodfrueectpfroordpuacct kfoinr gpaccokdinegscuofdfiex s”Guf”fix "H"
2
EMITTER
SOT–323
MHaelocgehnafreneipcroadlucdt afotr apacking code suffix “H”
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
M^•A^CX^aI^sM^eU^: M^MoR^ldA^eT^dIN^pG^laS^{stic, SOD-123H}
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y _Rating
Symbol
Value
Unit
Method 2026
r _{• PCoollalercittyor:–IEnmdiicttaetreVdolbtaygceathode bVanCEdO}
40
Vdc
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
• M^Co^ou^llen^cti^ton^rg^–BP^ao^ss^eit^Vio^on^lta: ^gA^eny
V _CBO
75
Vdc
a _{• WEmeiigtthetr–:BAapsperoVxoiltmagaeted 0.011 graVmEBO}
6.0
Vdc
in ^CollectM^orA^CX^urI^rM^enU^{t —}M^CR^onA^tiT^nuIN^ouG^sS A^IN^C D ELECT⁶R⁰I⁰CAL CH^mA^AR^dcACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
SFoinrgclea_TppHahcEaits_RiveeMhla_AolafLdw,Cad_Hvee_Ar,aR6te0_AHc_Cuzr,TrreEens_RtisIbStyiv_T2eI0Co%f_Sinductive load.
lim ^{CharacterisRtiAcTINGS}
Marking Co^Td^oe^{tal Device Dissipation FR– 5 Board,}
Maximum R^TeAcu⁼rr²e⁵n^°t^CPeak Reverse Voltage
e Maximum RTMhSerVmoaltlaRgeesistance Junction to Ambient
Junction and Storage Temperature
Maximum DC Blocking Voltage
SYMBOL F^SM^y1^m20^b-M^oH^l FM130-MH^MF^aM^x140-MH FM^U15ⁿ0ⁱ-^tMH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
1_P2_D
VRRM
20
13 ₁₅₀14
30
40
m¹⁵W ¹⁶
50
60
VRMS
R_14θJA
21 ⁸³³28
°₃C₅/W ₄₂
VDC
T_J2,₀T_stg
–55 to +150
30
40
°C
50
60
18
10
115 120
80
100
150
200 Volt
56
70
105
140 ^Volt
80
100
150
200 ^Volt
r _{Maximum Average Forward Rectified Current}
IO
1.0
Amp
P _{Peak FoDrwEaVrdICSEurgMe ACuRrrKenINt 8G.3 ms single half sine-wave IFSM}
30
Amp
superimpose_Md_Mo_Bn _Tra₂te₂d₂₂lo_Aad_W(_TJE₁DE₌C_Pm₁ethod)
Typical_ET_Lh_Eer_Cm_Tal_RR_Ie_Cs_Ais_Ltan_Cc_He (_AN_Rot_Ae _C2)_TERISTICS
Typical Junction Capacitance (Note 1)
(T_A
=
RΘJA
25_C°_JC
unless
otherwise
noted.)
40
120
℃/W
PF
Operating Temperature RCahngaeracteristic
TJ
Symbo^-l^{55 to +125} Min
Max
Un^-i⁵t^{5 to +150}
℃
Storage_OT_Fe_Fm_Cpe_Hra_Atu_Rre_AR_Ca_Tng_Ee_RISTICS
TSTG
- 65 to +175
℃
Collector_C–E_Hm_ARitt_Ae_Cr _TB_Ere_Ra_ISkd_To_ICw_Sn Voltage (1)
Maximum F(Io_Crw=a1rd.0VmolAtadgce, aIt_B1=.00A) DC
SYMBOL
VF
FM_V12₍0_BR-M_)CH_EOFM130-M₀H_.5F₀M140₄-₀MH
FM150-MH FM1_—60-MH
0.70
FM180-_VM_dH_cFM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
UNI
Volt
Maximum ACvoelrleacgteorR–eBvaesrseeBCreuarrkednot watn V@oTltaAg=e25℃
IR
Rated DC B^(Ilo_Cc⁼ki¹n⁰g ^µV^Aol^dta^cg^,e^I _E ^{= 0)}
@T A=125℃
V _(BR)CBO
75
— ^0.5
Vdc
10
mAm
Emitter–Base Breakdown Voltage
N1-OMTeEaSs:ured_{B(IaaEts=1eM1C0HuZµtoAafnfddCc,auIprrCpel=inedt0)reverse voltage of 4.0 VDC.}
V _(BR)EBO
6.0
2- Thermal R_(Ves_Cis_Eta₌n₆ce₀ F_Vr_dom_c, J_Vun_Ec_Bt₌ion_3.t₀o A_Vm_dcb₎ient
I _BL
—
—
Vdc
20
nAdc
Collector Cutoff Current
(V = 60 Vdc, V = 3.0 Vdc)
CE
EB
I _CEX
—
10
nAdc
1. Pulse Test: Pulse Width<300 µs, Duty Cycle<2.0%.
2012²-1⁰¹1^2-06
WILL^WA^IS^LLE^AL^SEC^ELT^ER^CO^TN^RI^OC^NC^ICOR^CP^O.^RP.