MMBT2222AWT1 Datasheet, PDF (2/3 Pages) Motorola, Inc – General Purpose Transistor

WILLAS
FM120-M+
MMBT2222AW^THT^R1^U
1G.0AeSnUReFArCaElMPOUuNrTpSCoHOsTeTKTY BrAaRnRIsERisREtCoTrIFsIERS -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
Package outline
•_EB_La_Et_Cch_TRpr_Io_Cc_Ae_Lss_Cd_He_Asi_Rgn_A,_Ce_Txc_Ee_Rll_Ie_Sn_Tt _Ip_Co_Sw₍e_Tr _Ad₌is₂s₅ip_°Cat_uio_nn_leo_ssffe_otr_hs_{erwise noted) (Continued)}
better reverse leakage current and thermal resistance.
• Low profile surface mount^Ce^hd^aa^rap^cp^tl^eic^ria^st^tiⁱo^cn in order to
Symbol
Min ^SOD-1M²³a^Hx
Unit
OoNptCimHiAzeRbAoCaTrdEsRpIaScTeI.CS (1)
• Low p_Do_Cwe_Cr_ul_ro_res_ns_t,_Gh_aig_inh₍e₁f₎ficiency.
• High c_(Iu_Cr₌re₀n_.t₁c_ma_Apa_dcb_,il_Vity_C,_El₌ow₁₀fo_Vr_dw_ca₎ rd voltage drop.
• High s_(Iu_Cr₌ge_1.c₀a_mpa_Ab_di_cli_,t_Vy. _{CE = 10 Vdc)}
• Guard_(Iri_Cn₌g₁f₀or_mo_Av_de_cr_,v_Vol_Cta_E g₌e₁₀pr_Vo_dte_c)ction.
• Ultra ₍h_Ii_Cg₌h-₁s₅p₀e_med_Ads_cw_,i_Vtch_CEin₌g₁._{0 Vdc)}
•
•
Silico₍n_I
C^e=^p
i₅ta₀x₀i_mal_Ap_dla_c,n_Va
rc
CE
h₌ i
1^p0^,
m_Vde_cta₎
l
silicon
junction.
Lead-free parts meet environmental standards of
MIL-S^CT^oD^lle-^c1^t9^o5^r–0^E0^m/2^itt2^e8^{r Saturation Voltage(1)}
• RoHS⁽p^I rCo⁼du¹c⁵t⁰fo^mr^Ap^da^cc^,k^IinBg⁼c¹o⁵d^me ^Asu^df^cfi⁾x "G"
hFE
VCE(sat)
35
50
75
100
40
0.146(3.7)
0.130(3.3)
––
––
––
—
––
––
0.3
––
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Vdc
Halog(eInC f=re5e0p0rmodAudcct,foI rB =pa5c0kimngAdcoc)de suffix "H"
––
1.0
MechBaasen–iEcmaittel rdSaatutration Voltage(1)
V BE(sat)
Vdc
• Epoxy^(I :^CU⁼L¹9⁵4⁰-^mV0^Adra^c,te^I d^{B =}fla¹m^{5 m}e ^Are^dt^ca⁾rdant
(I C = 500 mAdc, I B = 50 mAdc)
• Case : Molded plastic, SOD-123H
,
y •_ST_Me_Arm_Li_Ln_–a_Sls_IG:P_Nla_Ate_Ld_Cte_Hr_Am_Rin_Aa_Cls_T, _Eso_Rld_ISe_Tra_ICbl_Se per MIL-STD-750
Method 2026
Current–Gain — Bandwidth Product
r _•
Po
l
a
r₍it_I
y
C
:₌I
n₂₀d
i_mca_At_de_cd_,
b_Vy_Cc_E=at₂h₀o_Vd_de_c,b_fa₌nd₁₀₀
MHz)
0.6
––
0.031(0.8) Typ.
1.2
2.0
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
fT
Dimen³s⁰io⁰ns in inches ^–a^–nd (millimete^Mrs^H) ^z
• Moun_Otin_utg_puP_to_Cs_ait_pio_acn_it:_aA_ncn_ey
a _{• Weigh(Vt :CAB=pp10roVxdimc,aItEe=d 00,.0f 1=11g.0raMmHz)}
C obo
––
8.0
pF
Input Capacitance
in (VM_EA_B =X0I.M5 UVdMc, RI _CA=T0I,Nf =G1S.0AMNHDz)
ELECTRICAL
CHARACTER^CIⁱS^bo TICS
––
30
pF
Ratings at 25℃Inpaumt bImiepnetdteamncpeerature unless otherwise specified.
Single phase h(aVlf CwE=av1e0, V60dHc,zI, Cre=s1is0tivmeAodfci,nfd=uc1ti.v0eklHoza)d.
h ie
0.25
1.25
kΩ
lim ^For
capacitive
Vlooaldta,gdeeFraetedcbuarcreknRt abtyio20%
(V CE= 1_R0_AV_Td_INc,_GI_SC = 10 mAdc,
f
=
1.0
S^kHYM^z)BOL
FM120-MH
h re
FM130-MH FM140-MH
FM150-MH
––
FM160-MH
4.0
FM180-MH
X 10 ^–4
FM1100-MH FM1150-MH
FM1200-MH
UN
Marking Code ^{Small–Signal Current Gain}
12
Maximum Recur⁽re^Vn^Ct^EP⁼e¹a⁰k R^Ve^dv^ce^, r^Is^Ce⁼V¹o⁰lta^mge^{Adc, f = 1.0 kH}V^zR⁾RM
20
13
30
14h _fe 15
7156
40
50
60
13875
80
10 — 115
100
150
120
200 Vol
Output Admittance
e _{Maximum RMS Voltage}
VRMS
14
21
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
r Maximum DC Blo_Nc_ok_ii_sn_eg_FV_io_gl_uta_rege
VDC
20
30
P ^{Maximum Averag(Ve FCEo=rw1a0rdVRdce,cItifCie=d 1C0u0rreµnAtdc, R S= 1.0 kIOΩ, f = 1.0 kHz)}
28h oe 35
40
50
NF
2452
52600
60
80
–– _1.0
4.0
70µmhos 105
100
150
dB
140 ^Vol
200 ^Vol
Am
Peak Fo_Srw_War_Id_TS_Cu_Hrg_Ie_NC_Gur_Cre_Hnt_A8._R3 m_As_Cs_Tin_Egl_Re _Ih_Sal_Tf s_ICine_S-wave _IFSM
30
Am
superimposed on rated load (JEDEC method)
Typical Therm^Da^el^laR^ye^Tsⁱis^mta^ence (Note 2)^{(V CC = 3.0 Vdc, V BE}R⁼Θ^–JA^{0.5 Vdc}
td
— ₄₀
10
℃/W
Typical Junct^Rio^isn^eC^Taⁱp^ma^ecitance (Note ^I1C) ^{= 150 mAdc, I} B1 ⁼C¹J^{5 mAdc)}
tr
— 120
25
ns
PF
Operating Te_Sm_top_re_ara_gt_eur_Te_imR_eange _{(V CC = 30 Vdc, I C = 1}T₅J_{0 mAdc}
-55 to +125 _{t s}
—
225^{-55 to +150} ns
℃
Storage Tem_Fp_ae_lr_la_Ttu_imre_eRange
I B1 = I B2 = 15 mAdc)^TSTG
- 65 to +175
tf
—
60
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximu¹m^{. P}F^uo^lr^sw^ea^Trd^esV^to^: l^Pta^ug^lse^ea^Wt 1ⁱ.^d0^tA^h D^<C^{300 µs, Duty Cycle} V^<F ^2.0%.
0.50
0.70
0.85
0.9
0.92 Vol
Maximum Average Reverse Current at @T A=25℃
Rated D^OC^rB^dlo^eck^rinⁱⁿg V^gol^Itaⁿg^fe^ormation@TA=125℃
IR
0.5
mAm
10
NOTES:
Device
Marking
Shipping
1- MeasureMd MatB1TM2H2Z22aAndWaTp1plied reversPe1voltage of 4.0 V3D0C0.0/Tape&Reel
2- Thermal Resistance From Junction to Ambient
2012²-1⁰1^12-06
WILL^WAS^ILE^LAL^SEC^ET^LR^ECO^TN^RIC^ONC^IO^CR^CP^O.^RP.