MMBD914LT1 Datasheet, PDF (3/3 Pages) Motorola, Inc – High-Speed Switching Diode

WILLAS
FM120-M+
MMBD914LT1_THRU
High−Speed
1.0A SURFACE MOUNT
S^SC^wHOⁱT^tT^cKY^hBⁱAⁿR^gRIE^DR ⁱR^oE^dCT^eIFIERS
-20V-
200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
•
better reverse leakage current and therma_Sl re_Osis_Tta_-n₂c₃e.
Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection^.1. ^22(3.10)
• Ultra high-speed switching.
.106(2.70)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method _.2₀0₈2₀6_(2.04)
• Polarity : Indicated_.b₀y₇c₀a₍t₁h_.o₇d₈e₎band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.008(0.20)
.00_D3_im(_e0_n._s0_io8_ns) _{in inches and (millimeters)}
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half .w0a0v4e,(060.1H0z,)MresAisXti.ve of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
Maximum Recurrent Peak Reverse Voltage .020(0V.5RR0M)
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
.012(0V.3RM0S) ¹⁴
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
Dimensions in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
0.037
0.95
RΘJA
CJ
TJ
0.037
0.95
-55 to +125
Storage Temperature Range
TSTG
1.0
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-₀M_.0H₇₉FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
20.0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@⁰T^.0A³=⁵125℃
IR
0.5
10
0.9
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.031
0.8
inches
mm
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.