MMBD914LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – High-Speed Switching Diode

WILLAS
FM120-M+
MMBD914LT1_THRU
1.^H0AⁱS^gU^hRF^−A^SCE^pM^eO^eUN^dT S^SC^wHOⁱT^tT^cKY^hBⁱAⁿR^gRIE^DRⁱR^oEC^dT^eIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Featu•rLeosw profile surface mounted application in order to
z Ro_•H_LoS_opwtp^imr_po^iod^zwu^ec_ebt_rof_lo^aor^rsdp_sa_,shc^pk_iagi^cn_heg_e. c_ffo_icd_ie_ens_cu_yf_.fix "G"
z ^Ha_•^lo_H^g_i^e_gⁿ_{h c}^fr_u^e_r^e_re^p_n^r_t^o_c^d_a^u_p^c_a^t_b^fo_ili^r_ty^p_,^a_lo^c_w^kin_fo^g_rw^co_a^d_rd^e _v^s_o^u_l^f_t^f_a^ix_ge^"H_d^"_rop.
z Mo•isHtiugrhesSuergnesictiavpitaybLilietyv.el 1
• Guardring for overvoltage protection.
MAXIM•UUMltrRa AhiTgIhN-GspSeed switching.
• Silico_Rn_ate_inp_gitaxial planar chip, m_Se_yt_ma_bl s_oi_llicon j_Vu_an_lc_ut_eion. _Unit
• Lead-free parts meet environmental standards of
Reverse_MV_ILol_-t_Sag_Te_{D-19500 /228}
V_R
100
Vdc
Forwa^•rd^RC^oHur^Sre^pn^rt^{oduct for packing code suff}Iⁱ_F^{x "G"}
200
Halogen free product for packing code suffix "H"
Peak _MFor_ewa_crd_hS_aur_nge_icCu_arr_len_dt _ata I_FM(surge)
500
mAdc
mAdc
THER_•M_EA_pL_oxC_yH_:A_UR_LA₉₄C_-T_VE₀R_raIS_teT_dIC_flS_{ame retardant}
•
Characteristic
Case : Molded plastic,
Symbol
SOD-123H
Max
Unit
Total
D_• e_Tv_eic_re_mD_inis_as_lsipa_:Ptio_lan_t
ed
t
ermi
na
l
s
,
s
old^Pe^Dra
ble
p
225
er MIL-STD
-
mW^,
750
FR–5 Board (Note 1.)
T_A = 25°C
Method 2026
Der_•at_Pe_oa_lb_ao_rv_ite_y 2_: 5_In°C_{dicated by cathode band}
1.8
mW/°C
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
3
CATHODE
0.031(0.8) Typ.
0.040(1.0)
1 ^0.024(0.6)
ANODE
0.031(0.8) Typ.
MARKING DIAGRAM
Dimensions in inches and (millimeters)
Therm•aMl RoeusnistitnangcPe,osition : Any
R_qJA
556
°C/W
Junction to Ambient
• Weight : Approximated 0.011 gram
Total Device Dissipation
P_D
300
mW
Alumina Sub_Mstr_Aat_Xe _I(_MNo_Ute_M2.)_{RATINGS AND ELECTRICAL CHARACTERISTICS}
Rati_DTn^Ag_es_r=aa_t2et⁵2_a^°5^Cb℃_ovea₂m₅b_°Cient temperature unless otherwise s₂p_.4ecified. _mW/°C
SFoi_Tnr_hg_Jcele_uarnmppcaah_tcila_{oiRtsniveeteso}h_ilsa_Aotl_aamf _ndwbc,ia_{eedv,neetr,a6te0Hcuzr,rreenstisbtyiv2e0o%f} i_Rn_qd_Ju_Active load₄.₁₇
°C/W
5D
5D = Device Code
Junction and Storage^RATINGS
MarkTinegmCpoedraeture Range
T_J, T_stg ^SYM–5^B5^OLto^FM120-M°^HC^{FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH}
+150 12
13
14
1O5 RDER1IN6 G INFO1R8MATIO1N0
115 120
M_Eax_Li_Em_Cum_TRR_Ie_Ccu_Arr_Len_Ct _HPe_Aa_Rk _ARe_Cv_Te_Ers_Re _IV_So_Tlt_Ia_Cge_{S (TA = 25°C u}V_nR_lR_eM_{ss other}2_w0_{ise note}3_d0₎
Maximum RMS Voltage
VRMS
14
21
Characteristic
Symbol Min Max Unit
Maximum DC Blocking Voltage
VDC
20
30
OFF CHARACTERISTICS
Maximum Average Forward Rectified Current
IO
Reverse Breakdown Voltage
V_(BR)
100
–
Vdc
Peak(FI_Ror=wa1r0d0SmuArgdecC) urrent 8.3 ms single half sine-wave _IFSM
sup_Re_eri_vm_ep_ro_ss_ee_Vd_oo_ln_tar_ga_ete_Ld_elo_aa_kd_a(_gJ_eED_CE_uC_rrem_ne_tthod) _IR
Typic(aVl_RTh=e2rm0 aVldRce)sistance (Note 2)
– RΘJA 25
nAdc
Typic⁽a^VlRJu⁼n⁷ct⁵io^Vn^dC^ca⁾ pacitance (Note 1)
– _CJ 5.0
mAdc
40
50
60
80
100
150
200
28 ^Dev3^ic5^e
42^Package56 ^Sh7^ip0^ping 105
140
40_MMBD95₁0_4LT1 60_SOT−2380 _3000/T1_a0_p0_{e & Reel}150
200
1.0
30
40
120
Op_De_ir_oa_dti_eng_CT_ae_pm_acp_ie_tara_nt_cu_ere Range
Stora⁽g^VeRT⁼em^0,p^fe⁼ra¹tu^.0re^MR^Ha^zn⁾ge
C_T
– ^TJ 4.0
p^-F^{55 to +125}
TSTG
-55 to +150
- 65 to +175
Forward Voltage
V_F
(I_F = 10 mAdc)CHARACTERISTICS
–
1.0
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Ma_Rxi_em_vu_em_rseFo_Rr_ew_ca_ord_veV_ro_ylt_Ta_ig_me_eat 1.0A DC
t_rr
– ^VF 4.0
ns
0.50
Maxim_(IFum_{= I}A_Rv₌er₁a₀ge_mR_Ae_dv_ce₎rs_(Fe_igC_uu_rr_ere₁n₎t at @T A=25℃
IR
R₁a_. te_Fd_RD_–C_{5 =}Bl₁o_.c₀ki_ng₀V_.7o₅lta_ge_{0.062 in.} @T A=125℃
0.70
0.85
0.5
10
0.9
0.92
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.