MMBD914LT1 Datasheet, PDF (2/3 Pages) Motorola, Inc – High-Speed Switching Diode

WILLAS
FM120-M+
MMBD914LT1_THRU
High−Speed
1.0A SURFACE MOUNT
S^SC^wHOⁱT^tTK^cY^hBⁱAⁿR^gRIE^DR ⁱR^oEC^dT^eIFIERS
-20V-
200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
820
F
e^Ωatu
r
e
s
Package outline
+10 V
•
•
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tr
tp
t
optim0.i1zµeFboard space.
10%
IF
SOD-123H
trr
t
• Low power loss, high efficiency.
• High current capability,_Dlo_UTw forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
50 Ω O•UHTPigUTh surge capability.
50 Ω INPUT
PU•LSGEuardring for overvoltage protectionS.AMPLING
GENE_•RA_UTO_ltR_{ra high-speed switching.}
OSCILLOSCOPE
VR
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
90%
INPUT SIGNAL
iR(REC) = 1 mA
IR
0.071(1.8)
OUTPUT PULSE 0.056(1.4)
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
• RoHS product fo_Nr_op_ta_ec_sk_: i₁n_.g_Ac₂o_.d₀e_ks_Ωuf_vf_aix_ri"_aG_bl"_{e resistor adjusted for a Forward Current (IF) of 10 mA.}
Halogen free proNdoutects:fo2r. pInapcuktinpgulcsoedies asdujfufisxte"Hd"so IR(peak) is equal to 10 mA.
Mechanica^Nl^otd^esa^{: 3}t^.a^{tp » trr}
• Epoxy : UL94-V0 rated flame retardant
Figure 1. Recovery Time Equivalent Test Circuit
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
100
,
• Terminals :Plated terminals, solderable per MIL-STD-750
10
T_A = 150°C
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
• Polarity : Ind^TiAc⁼at⁸e^5°d^Cby cathode band _{TA = -40°C}
1.0
DimT_Aen=s1io2n5s°Cin inches and (millimeters)
10 ^{• Mounting Position : Any}
• Weight : Approximated 0.011 gram
MAXIMUM
RATINGS^TAA⁼N²⁵D^°CELECTRICAL
0.1
CHARACTERISTICS
T_A = 85°C
Rat¹in^.0gs at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
0.01
T_A = 55°C
For capacitive load, derate current by 20%
0.1
RATINGS
Marking0.C2ode 0.4
0.6
0.8
SYMBOL FM120-MH F₀M_.01₀3₁0-MH FM140-MH FM150-M^TH^A F⁼M²1⁵6^°0^C-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
1.0
1.212
13 0 14 10 15 20 16 30 18
4010
50115 120
Maximum Recurrent PeVa_FkH RFOeRveWrAseRDVVolOtaLgTAeGE (VOLTS) VRRM
20
30
40 V_R5H0REVERS6E0VOLTAGE 8(V0OLTS) 100
150
200
Maximum RMS Voltag_Fe_{igure 2. Forward Voltage} VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
28 _Fig3_u5_{re 3. L}4_e2_{akage C}5_u6_rrent 70
40
50
60
80
100
105
140
150
200
Maximum Average Forward Rectified Current
IO
1.0
0.68
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2) _0.64
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
0.60
RΘJA
CJ
TJ
TSTG
-55 to +125
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A D₀C_.56
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
0.5
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
0.52
0
2.0
4.0
6.0
8.0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDCV._RH REVERSE VOLTAGE (VOLTS)
2- Thermal Resistance From Junction to Ambient
Figure 4. Capacitance
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.