MMBD3004S Datasheet, PDF (3/3 Pages) Diodes Incorporated – HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE

WILLAS ^FM120-M+
1.0A_SHS_WU^IGR_IF_THA_CC^VHE^OIM^LNO^TGU^AN_DGT_IES_OC^SDH^UEO^RTT^FK^AY^CB^EAR^MR^OIE^UR ^N_SROE^T_DC-T1I2F3IE+RSP-A2C0VK-A2G0E0^MV ^MBD300F⁴_P^SM_{b F}1^T_re2^H_e0^R_P0_r^U_o-_dM_uc+_t
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
SOT-23
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.122(3.10)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental sta^.1n⁰da⁶r⁽d²s^.7o⁰f⁾
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by ca.0th8o0d(2e.b0a4n)d
• Mounting Position : Any^.070(1.78)
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.008(0.20)
Dimensions in inches and (millimeters)
.003(0.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave,_.060₀H₄z₍₀, r_.e₁s₀is_)Mtiv_Ae_Xo_.f inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
12
13
14
15
16
.02V0(R0R.M50) ²⁰
30
40
50
60
.01V2(R0M.S30) 14
21
28
35
42
18
10
115 120
80
100
150
200 Vo
56
70
105
140 ^Vo
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 ^Vo
Maximum Average Forward Rectified Current
IO
1.0
Am
Dimensions in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
Am
Typical Thermal Resistance (Note 2)
RΘJA
40
℃/
Typical Junction Capacitance (Note 1)
CJ
120
P
Operating Temperature Range
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.037
0.037 ^{SYMBOL FM120-MH FM130-MH FM140}0^-.^M9^H5 ^{FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN}
0.95 ^VF
0.50
0.70
0.85
0.9
0.92 Vo
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mA
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.