MMBD3004S Datasheet, PDF (2/3 Pages) Diodes Incorporated – HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE

WILLAS ^FM120-M+
1.0A S_SHU_WIR^GIF_THA_CC^VE_HOM_ILNO^TGU^AN_DGT_IS^EOC^SDH^UO_ERTT^FK^AY^CB^EAR^MRI^OER^U_SR^N_OE^T_DC-T1I2F3IE+RSP-A2C0VK-A2G0E0^MV ^MBD300F⁴_PM^S_{b F}1^T_re2^H_e0^R_P0_r^U_o-_dM_uc+_t
Features
• Batch process design, excellent power dissipation offers
5^b0^e0^{tter reverse leakage current and thermal resistance.}
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
•⁴H⁰i⁰gh current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• 3U0l0tra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
2^M00^{IL-STD-19500 /228}
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
100
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0
,
•
Term₀inals
:Plated
terminal₁s₀, ₀solderable
per
MIL-STD-750
200
Method 2026
T_A, AMBIENT TEMPERATURE, (°C)
• Polarity_F: _iI_gn_.d₁ic_Pa_ote_wd_erb_Dy _ec_ra_at_th_ino_gd_Ce _ub_ra_ven_,d_{total package}
• Mounting Position : Any
1000
• Weight : Approximated 0.011 gram
Package outline
1000
100
10
1.0
SOD-123H
T_j = 150°C
0.146(3.7)
0.130(3.3)
T_j = 25°C
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.1
0.01 ^{0.031(0.8) Typ.}
0
400
800
1200
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
1600 2000
V_F, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typic^Daⁱl^mF^eoⁿr^sw^ioaⁿr^sdⁱⁿCⁱⁿh^ca^hr^ea^sc^ateⁿr^dis^(mtic^ils^lim, p^ee^ter^rse⁾lement
1.1
100 ^{MAXIMUM RATINTj =G1S50°AC ND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
1.0
Single ph₁a₀se half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.0
Marking Code
RATINGS
T_j = 75°C
Maximum Recurrent Peak Reverse Voltage
Maximum ⁰R^.M¹ S Voltage
T_j = 25°C
Maximum DC Blocking Voltage
Maximum0.A0v1erage Forward Rectified Current
SYMBOL FM120-MH FM130-MH₀F_.9M140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 Vol
VRMS
14
21
28
35
42
0.8
VDC
20
30
40
50
60
56
70
105
140 ^Vol
80
100
150
200 ^Vol
IO
1.0
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superim⁰p^.o⁰s⁰e¹d o₀n rated₅l₀oad (J₁E₀D₀EC m₁e₅t₀hod) _{200 250}
Typical Thermal Resistance (Note 2)
IFSM
300 350
RΘJA
Typical Junction^VCR^,a^Ip^Na^Sci^Tta^An^Nce^TA(N^No^Ete^O1^U)^{S REVERSE VOLT}C^AJ^{GE (V)}
Operating Tem^Fp^ige^.ra³tu^Tre^ypR^ica^ang^l e^{Reverse Characteristics, p}T^eJ^{r element}
Storage Temperature Range
TSTG
0.7
0.01
-55 to +125
30
0.1
1.0
10
100
V_R, REVE⁴R⁰SE VOLTAGE (V)
Fig. 4 Typ1ic2a0l Total Capacitance
vs. Reverse Voltage, pe_-r₅e₅le_tm_oe₊n₁t₅₀
- 65 to +175
Am
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vol
IR
0.5
mAm
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.