MMBD3004S Datasheet, PDF (1/3 Pages) Diodes Incorporated – HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE

WILLAS ^FM120-M+
HIGH VOLTAGE SURFACE MOUNT
1.0A_SS_WUR_ITFA_CC_HE_IM_NO_GUN_DT_IOSC_DH_EOTTKY BARRIER RECTIFIERS
-20V-
MMBD3004S ^THRU
200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• L_·ow_Fp_ar_so_tfi_Sle_ws_iu_tr_cf_ha_ic_ne_gm_So_pu_en_ete_dd application in order to
• Lo^·opwtim^Hpio^izgwe^heb^Crola^oors^ndsd,s^uhp^cia^tg^achene.^cf^eficiency.
• H_·igh_Hc_iu_gr_hre_Rnt_ec_va_ep_rsa_ebi_Blit_ry_e,_alo_kw_dofo_wrw_na_Vrd_olv_to_al_gta_eg_Re_ad_tr_io_np_g.
• H_·igh_Ws_eur_dg_ee_cc_la_ap_reab_ti_hli_aty_t._{the material of product}
• Gua_crd_or_min_pg_lif_ao_nr _co_eve_wrv_ito_hlta_Rg_oe_Hp_Sro_rt_ee_qct_uio_irn_e._ments.
•
•
SU^·illtirca^Mohn^oigeishpt-iutsa^rpxeeiaeSld^ep^nslawsn^iittacivrhⁱci^tnhygipL. ,^em^vee^lta¹l
silicon
junction.
• L_Oea_rd_d-f_ere_re_inpa_grt_Is_nm_fe_oe_rt_men_av_tir_io_on_nm₍e_Pn_bta_-l_fs_rta_en_ed₎ards of
MIL-STD-19500 /228
• RoHS proDduecvticfoer packing codMe asurkffiixn"gG"
Shipping
Halog_Men_Mfre_Be_Dpr₃o₀d₀u₄ct_Sfor packing_Kc_Ao_Ede suffix₃"H₀₀" _{0 / Tape & Reel}
M_Pe_bc_-h_Fra_en_e i_pc_aa_ckl_ad_ga_et_ia_{s available}
• E_Rp_oox_Hy_S: U_pL_ro94_d-_uV_c0_t r_fa_ot_red_pafl_ca_km_ine_gre_cta_or_dd_ean_st_{uffix ”G”}
• C_Ha_ase_lo:_gM_eo_nld_fe_red_epl_pa_rs_oti_dc_u, S_ctO_fD_o-_r1_p2_a3H_{cking code suffix “H” ,}
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT –23
0.031(0.8) Typ.
CAHODE/ANODE
3
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
1
ANODE
2
CATHODE
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• M_Mou_an_xtin_img P_uo_msiti_Ron_a:_tA_in_ny_{gs @ TA=25℃ unless otherwise specified}
• Weight : Approximate_Cd_h0_a._r0_a1_c1_teg_rr_ia_sm_tic
Symbol
MMBD3004S
Unit
Repeti_Mtiv_Ae_XP_Ie_Mak_UR_Mev_Rer_Ase_TV_INol_Gtag_Se _{AND ELECTRICAL CHA}V_RR_ARM_CTERISTICS 350
V
Ratings atW25o℃rkinagmPbeieanktRteemvepresreaVtuorletaugneless otherwise specified.
VRWM
Single pha_Dse_Ch_Ba_ll_of _cw_ka_iv_ne_g,_V6_o0_lH_taz_g,_eresistive of inductive load.
VR
300
V
For capacitive load, derate current by 20%
RMS Reverse Voltage
VR(RMS)
212
V
RATINGS
Marking Co^Fde^{orward Continuous Current(Note 2)}
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
13^IF 14
15 ²²⁵ 16
18 ^mA10
115 120
Maximum RPeecaukrreRnetpPeetiatkivReeFveorrsweaVrdoltCaugerrent(Note 2) VRRM
20
3I0FRM 40
50 625 60
80 mA100
150
200 V
Maximum R_NM_oS_nV_-Ro_elta_pg_ee_{titive Peak Forward Surge Curre}V_nR_tMS_@t=1.1₀4_µs
Maximum DC Blocking Voltage
VDC _@t=12_.00_s
Maximum Average Forward Rectified Current
IO
Power Dissipation(Note 2)
21
28
3^I0^FSM 40
Pd
35 _4.0 42
50 _1.0 60
56
70
80
A₁₀₀
1.0
350
mW
105
140 ^V
150
200 ^V
A
Peak Forwar_Td_hS_eu_rr_mge_alC_Rur_ere_sn_ist_t8_a._n3_cm_es_Js_uin_ng_cl_te_ioh_nalf_tosin_Ae_m-w_ba_iv_ee_{nt AIiFrS(MNote 2)}
R0JA
357 30
℃/W
A
superimposed on rated load (JEDEC method)
Typical The^Orm^pa^el^rR^ateⁱsⁿi^gsta^anⁿc^de^S(^tN^oo^rate^ge2)^{Temperature Range}RΘJA
Tj, TSTG
-65 to +150 ₄₀
℃
℃
Typical Junction Capacitance (Note 1)
CJ
120
P
Operating T_Eem_lepe_cr_ta_rtu_ir_ce_aR_lan_Cge_{haracteristics @ TA}T₌J_{25℃ unless}^-5_o⁵_th^to_er⁺_w¹²_is⁵_{e specified, per element}
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
Characteristic
Symbol Min Typ MAX Unit
Test Condition
ReverseCBHrAeaRkAdCoTwEnRVISoTlItCagSe(Note 1) SYMBVO(LBRFM)R120-M3H5F0M130-MH FM140-MH FM150-MVH FM16I0R-M=H10F0Mµ1A80-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC B^Flo^oc^rk^win^ag^rdVo^Vlt^oa^lg^tae^{ge(Note 1)} @T A=125℃
VF
IR _VF
0.⁰7^.8⁵⁰ 0.87 ^0.70 IF=20mA ^0.85
0.5
0.93
1.0
V IF₁=₀100mA
0.9
0.92 V
m
1.03 1.25
IF=200mA
NOTES:
1- Measured_Rat_e1_veM_rH_seZ _Can_ud_rra_ep_np_tl₍ie_Nd_or_te_eve₁r₎se voltage of 4.0 VDC.
IR
2- Thermal Resistance From Junction to Ambient
30
100 nA VR=240V
35
100 µA VR=240V, Tj=150℃
Total Capacitance
CT
1.0
5.0 Pf VR=0V, f=1.0MHZ
Reverse Recovery Time
Trr
IF=IR=30mA
50
ns
Irr=3.0mA, RL=100Ω
Notes: 1. Short duration test pulse used to minimize self-heating effect.
2012-06 ^{2. Part mounted on FR-4 board with recommended pad layout.}
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.