8050HXLT1 Datasheet, PDF (3/3 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
FM120-M+
8050HxLT1THRU
G_1.0Ae_Sn_URe_FAr_Ca_El_MP_OUu_NTr_Sp_CHo_Os_TTe_KYT_BAr_Ra_RIn_ERs_Ri_Es_CTt_Io_FIEr_Rs_{S -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
•
Low profile surface mounted
optimize board space.
application
in
o_Srd_Oer_Tto_-23
SOD-123H
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.122(3.10)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental sta^.n¹d⁰a⁶rd⁽s²o^.7f ⁰⁾
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y _{Method 2026}
• Polarity : Indicated by cathode band
r _{• Mounting Position : An.y080(2.04)}
a _{• Weight : Approximated.007.001(11g.7ra8m)}
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dime_.n₀si₀on₈s₍i₀n _.in₂c₀he₎s and (millimeters)
.003(0.08)
in ^{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
lim ^{Marking Code}
.0^R0^A4^TI(^N0^G.1^S0)MAX.
Maximum Recurrent Peak Reverse Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
e _{Maximum DC Blocking Voltage}
VDC
20
30
40
50
60
80
100
150
200
r_.020(0.50)
Maximum Average Forward Rectified Current
IO
1.0
.012(0.30)
P _{Peak Forward Surge Current 8.3 ms single half sine-wave IFSM}
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Dimensio^Rn^Θs^JAin inches and (millimeters)
CJ
TJ
-55 to +125
40
120
-55 to +150
Storage Temperature Range
CHARACTERISTICS ^0.037
Maximum Forward Voltage at 1.0A DC
0.95
TSTG
- 65 to +175
0.037
SYMBOL FM120-MH FM130-MH FM^0.1⁹4⁵0-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
0.5
Rated DC Blocking Voltage
@T A=125℃
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambien₀t_.035
0.9
0.079
2.0
0.031
0.8
inches
mm
2012-^2012-06
WILLAS^WE^ILL^LE^AC^ST^ER^LO^EN^CI^TC^RC^OO^NR^ICP^C. ^ORP