8050HXLT1 Datasheet, PDF (2/3 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
1^G.0A^eSUⁿR^eFA^rC^aE M^l O^PUN^uT^rS^pCH^oOT^sTK^eY B^TA^rRR^aIEⁿR^sREⁱC^sT^tIF^oIER^rS^s-20V- 200V
SOD-123+ PACKAGE
FM120-M+
8050HxLT1THRU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
EL^bE^eC^tteT^rR^rI^eC^vA^erL^seC^lH^eaA^kR^aA^geC^cT^uE^rR^reIS^ntT^aIC^ndS^t(^hT^eA^r=^m2^a5^l°C^reu^sin^sl^te^asⁿs^ceo^.therwise noted)
• Low profile surface mounted application in order to
SOD-123H
op_Cti_hm_ai_rz_ae_cb_to_ea_rir_sd_tis_cpace.
Symbol
Min
Typ
• Low power loss, high efficiency.
O_• F_HF_ighCH_cuA_rR_reA_nC_{t c}T_aE_pR_aI_bS_iT_litI_yC_,S_{low forward voltage drop.}
Max
0.146(3.7)
0.130(3.3)
Unit
0.012(0.3) Typ.
• H_Cig_oh_lles_cu_tr_og_r-e_Ec_ma_ip_ttea_rb_Bili_rt_ey_a._{kdown Voltage}
• Guardring for overvoltage protection.
V(BR)CEO
25
–
• U₍lt_ICra₌₁h_.0ig_mh_A-s₎peed switching.
• Silicon epitaxial planar chip, metal silicon junction.
•
•
L^Eea^md^it-^tf^er^re^-Be^ap^sa^ert^Bs^rm^eae^ke^dt^oe^wnⁿv^Vir^oo^ln^tam^geental standards
R^Mo^(IIH^LE=-S^S1p^0Tr^0Do^µd^-Α1u⁾c⁹t⁵f⁰o⁰r
/228
packing
code
suffix
"G"
V^{o f}(BR)EBO
5
–
–
V
0.071(1.8)
0.056(1.4)
–
V
H_Cal_oo_lg_lee_cn_tofr_re_-Be_ap_sr_eod_Bu_rc_et_af_ko_dr_op_wa_nck_Vin_og_ltac_go_ede suffix "H"
Mechanical data
V(BR)CBO
40
–
–
V
(IC=100µΑ)
• Epoxy : UL94-V0 rated flame retardant
• C^Ca^os^le^le:^cM^too^r l^Cd^ue^td^ofp^f l^Ca^us^rt^ric^e,ⁿS^{t (}O^VD^CB-⁼1³2⁵3^VH⁾
ICBO
–
–
0.031(0.8) Typ.
• TeErmmiitntearlsC:uPtolaffteCdurtreernmt i(nVaEBls=,4sVo)lderable per MIL-SIETBOD-750,
–
–
150
150
0.040(1.0)
0.024(0.6)
nA
0.031(0.8) Typ.
nA
y _{Method 2026}
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
• Polarity : Indicated by cathode band
r _{• MoCuhnatrinagctPeorsisittiiocn : Any}
Symbol
Min
Dimensions in inches and (millimeters)
Typ
Max
Unit
a _{O• NWeCigHhAt R: AApCpTroExRimISaTteICd S0.011 gram}
in ^{DC CMuArreXnItMGUaiMn RATINGS AND ELECTRICAL CHARACTERISTICS}
Ratings at 25_IC℃₌₁₀a₀m_mb_Aie_,Vnt_Ct_Ee₌m_1Vperature unless otherwise specif_hie_Fd_E.
100
-
600
Single phase half wave, 60Hz, resistive of inductive load.
For capaciti^Cve^ol^lo^lea^cd^t,^od^re^-r^Ea^mteⁱc^ttu^er^rre^Snt^ab^tuy^r2^a0^t%^{ion Voltage}
lim ^{(IC=800mARIABT=I8N0GmSA)}
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
e _{NOTE :}
*
P
Maximum DC Blocking Voltage
r _{Maximum Average ForwharFdERectifie1d0C0u~r2re0n0t}
SYMBOL F^VM^C1^E2^(S0⁾-MH FM130-MH^-FM140-MH FM150^- -MH FM160-MH^0.F⁵M180-MH FM^V1100-MH FM1150-MH FM1200-MH U
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200 V
VRMS
14
21
28
35
42
Q
R
S
VDC
20
30
40
50
60
56
70
105
140 ^V
80
100
150
200 ^V
150~I3O00 200~400 300~600
1.0
A
P _{Peak Forward Surge Current 8.3 ms single half sine-wave IFSM}
30
A
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
IR
0.5
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-²^012-06
WILLA^WS ^IE^LL^LAE^SCT^ER^LO^ECN^TIC^ROC^NO^ICRP^C.^ORP