2SC2411KXLT1 Datasheet, PDF (3/4 Pages) WILLAS ELECTRONIC CORP – Medium Power Transistor

WILLAS
2SC2411KxL^FT^M1_T¹_H²_R⁰_U^-M+
Medium Power Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current_Ea_ln_ed_ct_th_re_icrm_aa_ll_cre_hs_ais_rt_aan_cc_te_e._{ristic curves(TA = 25°C) SOD-123H}
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
1000 _{• High current capability, low forward voVltCaEg=e 3dVrop.}
500
• High surge capability.
500 _{• Guardring for overvoltage protection.}
0.146(3.7)
0.130(3.3)
200 ^{••TaSU=illtir1ca07o05hnOOigeCChp-itsapxeiaeldpslawnitacrhcinhgip. , metal silicon junction.}
100
50
••_MRH^LM_e^eoa^IH^aL_lco^d-5S²_g^S_25h^-05_e0^Of₀^Op_O5^T_On^r_aOr^CeCD_Co_CfC^e_rnd^-_e¹u^p_eic^9a_ctp^5rfr^t0_aoo^s0rd_l^mpu^/2_dac^ec²_t^e_akf^8t_oint^e_rgaⁿ_pa^vcoc^ir_kd^o_ienⁿ_g^msuc^efofⁿidx^t_e^a"G^l_s^s_u"^t_f^a_fixⁿ
dar
"H"
d
s
of
• Epoxy : UL94-V0 rated flame retardant
20 _{• Case : Molded plastic, SOD-123H}
,
10 ^{• Terminals :Plated terminals, solderable per MIL-STD-750}
0.1 0.2 0.5 1 _M2_ethod5₂₀₂10₆ 20 50 100 200 500 1000
200
100
50
0.031(0.8) Typ.
0.5
1
2
5
10
0.012(0.3) Typ.
Ta = 25 ^OC
V CE = 5V
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
20
50
• Polarity : ^CIn^Od^LLic^Ea^Ct^Te^Od^Rb^Cy^Uc^Ra^Rth^ENo^Tde^{: I}_Cb⁽a^mn^Ad⁾
• MouFnigt.i5ng PDoCsictuiorrnen: At gnayin vs. collector current
Dim^Ee^Mn^Is^Ti^To^Ens^Rin^Ci^Unc^Rh^Re^Es^Na^Tnd^{: I}(_Em^(mill^Aim⁾ eters)
Fig.6 Gain bandwidth product vs. emitter current
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltag⁵e⁰
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
13
14 Ta = 2155^OC 16
18
10
115 120
VRRM
20
30
40 ^{f= 1M}5^H0^z
60
IE =0A
VRMS
14
21
28 IC ₌ 0A35
42
80
100
150
200 V
56
70
105
140 ^V
VDC ^Cib 20
30
40
50
60
80
100
150
200 ^V
IO
1.0
A
Peak Forward Surge Current 8.3 ms single ha₁l₀f sine-wave _IFSM
Cob
30
A
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
5
CJ
120
Operating Temperature Range
TJ
-55 to +125
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
2
0.5
1
2
5
10
20
50
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
CO_VLL_FECTOR TO BASE VOLT₀A_.5G₀E : V_CE(V)
@T
@T
AA==12255℃℃^{Fig.7EMIIRTCTEoRlleTcOtoBrASoEutVpOuLtTcAaGpEa: VcEitBa(Vn)ce}
vs.
0.70
0.5
10
0.85
0.9
0.92 V
m
collector-base voltage
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Emitter input capacitance vs.
emitter-base voltage
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.