2SC2411KXLT1 Datasheet, PDF (2/4 Pages) WILLAS ELECTRONIC CORP – Medium Power Transistor

WILLAS
FM120-M+
2SC2411KxLT1_THRU
Medium Power Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellen_Et p_lo_ew_ce_tr_rid_cis_as_lip_ca_hti_aon_raof_cfe_ters_{ristic curves(TA = 25°C)}
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
1000
•
500
Hi_Vg_Ch_Ec₌u₆r_Vrent
capability,
low
forward
voltage
drop.
• High surge capability.
200_{• Guardring for overvoltage protection.}
100_{• Ultra higTha-=s1p0e0eOdCswitching.}
5_•0
2^•0
10
Silicon epitaxial planar ch
Lead-free pa⁸r⁰t^Os^Cmeet envi
MIL-STD-19²5⁵0^O0^C/228
ip, metal s
ronmental
ilicon₂₅ju_On_Cction
standards of
55 ^OC
.
•₅RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
M² echanical data
1
0.^•5 ^{Epoxy : UL94-V0 rated flame retardant}
0.^•2 ^{Case : Molded plastic, SOD-123H}
,
0.•1 Terminals :Plated terminals, solderable per MIL-STD-750
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Method 2026
• Polarity : ^BIn^Ad^SEica^TOte^Ed^Mb^ITy^TEc^Rat^Vh^Oo^Ld^Te^AGb^Ea^:n^Vd^BE(V)
• M^Foⁱu^gn^.1ting^GP^roo^usⁿi^dti^eo^dn^e:^mAⁱn^ttey^{r propagation characteristics}
100
Ta ⁼ 25^OC
50
0.50mA
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.45mA
0.40mA
0.30⁵.0^m71^A(1.8)
0.056(1.4)
0.30mA
0.25mA
0.20mA
0.15mA
0.100.0m40A(1.0)
0.024(0.6)
0.05mA
0.031(0.8) Typ.
0.031(0.8) Typ.
0
I B = 0A
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Dimensions in inches and (millimeters)
Fig.2 Grounded emitter output characteristics(I)
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 V
Maxim5u0m0 RMS Voltage
Maximum DC Blocking Voltage
Ta^VR=^M2^S5^OC ¹⁴
21 ¹ _T2_a8_{= 25OC} 35
42
VDC
20
30
l4C0/l B = 10 50
60
56
70
105
140 ^V
80
100
150
200 ^V
Maxim₄u₀m₀ Average Forward Rectified Current
2mA_IO
1.8mA
Peak Forward Surge Current 8.3 ms single half sine-wave
superim₃₀p₀osed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
1.6mA
IF1S.4MmA
1.2mA
1.0mA
RΘJA
Typical Junction Capacitance (Note 1)
200
Operating Temperature Range
0.8_Cm_JA
0.6_Tm_J A
0.5
0.2
0.1
-55 to +125
1.0
A
30
A
40
℃
120
-55 to +150
Storage Temperature Range
100
TS_0.T₄G_mA
0.05
- 65 to +175
CHARACTERISTICS
SY0M.2BmOAL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
0
Maximum A⁰verage Re¹verse Curre²nt at @³T A=25℃⁴
IVB=F 0A
IR⁵
Rated DC Blocking V_Co_Ol_Lta_LEg_Ce_{TOR TO EMITT}@_ERT_VA_O=_L1_T2_A5_G℃_{E : VCE(V)}
0.0⁰2^.50
0.5 1 2
0.70
5 1 0 ₀2_.50
0.85
5 0 100 200
0.9
500 1000
COLLECTOR TO EM¹I⁰TTER VOLTAGE : VCE(V)
0.92 V
m
NOTES: Fig.3 Grounded emitter output characteristics(II)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Fig.4 Collector-emitter saturation voltage vs. collector current
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.